Auger recombination in 1.3-μm InAs/GaInAs quantum dot lasers studied using high pressure
- Marko, IP
- Andreev, AD
- Adams, AR
- Krebs, R
- Reithmaier, JP
- Forchel, A
Publication date
January 2020
DOI Publisher
Institute of Electrical and Electronics Engineers (IEEE)Abstract
The Auger recombination in 1.3μm InAs/GalnAs quantum dot lasers were investigated. To analyse the experimental results, theoretical model was used which includes strain, piezoelectric field and electronic structure calculated in the QDs of truncated pyramid shape. It was found that the radiative current increases with pressure, but the Auger recombination current decreases with pressure and is the dominant recombination path at room temperature in 1.3μm QD lasers. © 2003 IEEE
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