International audienceIGBT and MOSFET power switches are commonly used in power converters. MOSFET for middle power and IGBT for high power converters : gate drive circuits are used to drive such components. Some applications need to control dv/dt and di/dt from power switches to reduce electromagnetic emissions. New solutions have been introduced and tested since 1990 (conresponding to the maturation of IGBT technology). This article is about a state of the art of di/dt and dv/dt methods. The authors propose original solutions with simulations and experimental results on 1200A-3300V IGBT modules
The paper analyzes the phenomena of appearance of overvoltage during the switching-off of the IGBT t...
The purpose of this thesis research was to develop a new gate driver circuit for IGBT semiconductor ...
A variety of power devices are available to designers, each with specific advantages and limitations...
International audienceIGBT and MOSFET power switches are commonly used in power converters. MOSFET f...
Turn-off dV/dt controllability is an essential feature in IGBTs for flexible design in power switchi...
The increase of the switching speed in power semiconductors leads to converters with better efficien...
High dV/dt controllability of IGBT is an important factor for flexible design as well as low switchi...
This work presents different novel gate drive unit (GDU) concepts for IGBT and reverse conducting IG...
Active Gate Drives (AGDs) tailor the signal applied to the gates of power metal-oxide-semiconductor ...
This paper presents a comparative discover of power switches. Power switches are increasingly becomi...
Der Einsatz von schnellschaltenden IGBTs in Niederspannungs- und Mittelspannungsanwendungen sowie En...
National audienceThis article deals with advanced gate drivers for MOSFET and IGBT power electronics...
L'IGBT (Insulated Gate Bipolar Transistor) a pris une part importante dans les applications de l'éle...
Insulated gate bipolar transistor (IGBT) power semiconductors are widely employed in industrial appl...
International audienceThe control of MOSFET or IGBT transistors is carried out by a dedicated circui...
The paper analyzes the phenomena of appearance of overvoltage during the switching-off of the IGBT t...
The purpose of this thesis research was to develop a new gate driver circuit for IGBT semiconductor ...
A variety of power devices are available to designers, each with specific advantages and limitations...
International audienceIGBT and MOSFET power switches are commonly used in power converters. MOSFET f...
Turn-off dV/dt controllability is an essential feature in IGBTs for flexible design in power switchi...
The increase of the switching speed in power semiconductors leads to converters with better efficien...
High dV/dt controllability of IGBT is an important factor for flexible design as well as low switchi...
This work presents different novel gate drive unit (GDU) concepts for IGBT and reverse conducting IG...
Active Gate Drives (AGDs) tailor the signal applied to the gates of power metal-oxide-semiconductor ...
This paper presents a comparative discover of power switches. Power switches are increasingly becomi...
Der Einsatz von schnellschaltenden IGBTs in Niederspannungs- und Mittelspannungsanwendungen sowie En...
National audienceThis article deals with advanced gate drivers for MOSFET and IGBT power electronics...
L'IGBT (Insulated Gate Bipolar Transistor) a pris une part importante dans les applications de l'éle...
Insulated gate bipolar transistor (IGBT) power semiconductors are widely employed in industrial appl...
International audienceThe control of MOSFET or IGBT transistors is carried out by a dedicated circui...
The paper analyzes the phenomena of appearance of overvoltage during the switching-off of the IGBT t...
The purpose of this thesis research was to develop a new gate driver circuit for IGBT semiconductor ...
A variety of power devices are available to designers, each with specific advantages and limitations...