Add to ORKGInternational audienceAn intelligent measurement system for diagnosing of semi-insulating materials by photoinduced transient spectroscopy has been presented. The system utilises two-dimensional analysis of the photocurrent transients digitally recorded in a broad range of temperatures for determination of defect centers parameters and a simulation procedure for calculation their concentration. The system is shown to be a powerful tool for studies of defect structure of high-resistivity semiconductors
A deep level transient conductance spectrometer for high resistivity semiconductors, using a radiofr...
Current based microscopic defect analysis methods such as current deep level transient spectroscopy ...
The use of conventional capacitance-based deep-level transient spectroscopy is not applicable when d...
Przedstawiono problemy związane z charakteryzacją centrów defektowych w materiałach półizolujących A...
Electrical properties of semiconductor materials depend on their defect structure. Point defects, im...
This article deals with the possibilities of methods of the deep-level transient spectroscopy in sem...
Photoconductivity is the incremental change in the electrical conductivity of a semiconductor or ins...
This chapter aims to review analytical techniques for the detection of electrically active defects i...
This paper presents details of the design and implementation of a system for measuring of thermally ...
DE 10240060 A UPAB: 20040514 NOVELTY - Method for determination of local distributions of current or...
This paper presents details of the design and implementation of a system for measuring of thermally ...
We report on the effectiveness of two methods for recovering the density of electronic states from t...
The review focuses on four areas of defect and impurity diagnostics: (i) the determination of parasi...
Defects in semiconductors have been studied extensively over the past few decades. The advent of hig...
An expression for the density of states (DOS) distribution in disordered semiconductors based on tra...
A deep level transient conductance spectrometer for high resistivity semiconductors, using a radiofr...
Current based microscopic defect analysis methods such as current deep level transient spectroscopy ...
The use of conventional capacitance-based deep-level transient spectroscopy is not applicable when d...
Przedstawiono problemy związane z charakteryzacją centrów defektowych w materiałach półizolujących A...
Electrical properties of semiconductor materials depend on their defect structure. Point defects, im...
This article deals with the possibilities of methods of the deep-level transient spectroscopy in sem...
Photoconductivity is the incremental change in the electrical conductivity of a semiconductor or ins...
This chapter aims to review analytical techniques for the detection of electrically active defects i...
This paper presents details of the design and implementation of a system for measuring of thermally ...
DE 10240060 A UPAB: 20040514 NOVELTY - Method for determination of local distributions of current or...
This paper presents details of the design and implementation of a system for measuring of thermally ...
We report on the effectiveness of two methods for recovering the density of electronic states from t...
The review focuses on four areas of defect and impurity diagnostics: (i) the determination of parasi...
Defects in semiconductors have been studied extensively over the past few decades. The advent of hig...
An expression for the density of states (DOS) distribution in disordered semiconductors based on tra...
A deep level transient conductance spectrometer for high resistivity semiconductors, using a radiofr...
Current based microscopic defect analysis methods such as current deep level transient spectroscopy ...
The use of conventional capacitance-based deep-level transient spectroscopy is not applicable when d...