Ultrafast, ultra-broad-band photoconductive detector based on heavily doped and highly compensated germanium has been demonstrated. Such a material demonstrates optical sensitivity in the more than 8 octaves, in the infrared, from about 2 mm to about 8 μm. The spectral sensitivity peaks up between 2 THz and 2.5 THz and is slowly reduced towards lower and higher frequencies. The life times of free electrons/holes measured by a pump-probe technique approach a few tenths of picoseconds and remain almost independent on the optical input intensity and on the temperature of a detector in the operation range. During operation, a detector is cooled down to liquid helium temperature but has been approved to detect, with a reduced sensitivity, up to ...
International audienceIn this work we present how to fabricate large-area (15 cm 2 ), ultra-low thre...
Due to the “dead zone” effect, it has been difficult for typical infrared germanium photodetectors t...
High n-type doping in germanium is essential for many electronic and optoelectronic applications esp...
Ultrafast, ultra-broad-band photoconductive detector based on heavily doped and highly compensated g...
A broad-band, visible to the far-infrared, fast photoconductive detector based on heavily doped and ...
Highly compensated Ge:Ga photoconductors have been fabricated and evaluated for high bandwidth heter...
The availability of intense short-pulsed THz radiation from sources such as free electron lasers (FE...
PhDThis report describes an experimental study of the conduction and absorption mechanisms of Germa...
Intense and short pulsed THz sources require fast, broad-band detectors with large dynamic range. Ex...
We demonstrate silicon-based ultrafast metal-semiconductor-metal (MSM) photodetectors for near infra...
The optical saturation of nonresonant photoionization of shallow acceptors in p-Ge was investigated ...
The theoretical temporal resolution limit tT of a silicon photodiode (Si PD) is 11.1 ps. We call “su...
A single-color pump-probe system has been commissioned at the Novosibirsk free electron laser. The l...
Heavily doped semiconductor thin films are very promising for application in mid-infrared plasmonic ...
The authors report on Ge:Ga and Ge:Sb photoconductor materials and detectors that are under developm...
International audienceIn this work we present how to fabricate large-area (15 cm 2 ), ultra-low thre...
Due to the “dead zone” effect, it has been difficult for typical infrared germanium photodetectors t...
High n-type doping in germanium is essential for many electronic and optoelectronic applications esp...
Ultrafast, ultra-broad-band photoconductive detector based on heavily doped and highly compensated g...
A broad-band, visible to the far-infrared, fast photoconductive detector based on heavily doped and ...
Highly compensated Ge:Ga photoconductors have been fabricated and evaluated for high bandwidth heter...
The availability of intense short-pulsed THz radiation from sources such as free electron lasers (FE...
PhDThis report describes an experimental study of the conduction and absorption mechanisms of Germa...
Intense and short pulsed THz sources require fast, broad-band detectors with large dynamic range. Ex...
We demonstrate silicon-based ultrafast metal-semiconductor-metal (MSM) photodetectors for near infra...
The optical saturation of nonresonant photoionization of shallow acceptors in p-Ge was investigated ...
The theoretical temporal resolution limit tT of a silicon photodiode (Si PD) is 11.1 ps. We call “su...
A single-color pump-probe system has been commissioned at the Novosibirsk free electron laser. The l...
Heavily doped semiconductor thin films are very promising for application in mid-infrared plasmonic ...
The authors report on Ge:Ga and Ge:Sb photoconductor materials and detectors that are under developm...
International audienceIn this work we present how to fabricate large-area (15 cm 2 ), ultra-low thre...
Due to the “dead zone” effect, it has been difficult for typical infrared germanium photodetectors t...
High n-type doping in germanium is essential for many electronic and optoelectronic applications esp...