Ask
Search
My library
ORKG

ORKG Ask

Our mission is to organize scholarly knowledge and make it accessible to humans and machines.

About

About ORKG Ask
Report issue
Statistics
Contact

Legal

Terms of use
Data protection (sheet)
Imprint
Accessibility
License

Technical

We
open source
System status
Changelog
Frontend: v1.41.0
Backend: v1.13.4

We use cookies to provide a better user experience.

Data Protection

Strain-compensated (Ga,In)N/(Al,Ga)N/GaN multiple quantum wells for improved yellow/amber light emission

Lekhal, K.
Damilano, B.
Ngo, H. t.
ROSALES, Daniel
De Mierry, P.
Hussain, S.
Vennegues, P.
Gil, Bernard

Publication date

April 2015

DOI

10.1063/1.4917222

Publisher

American Institute of Physics

Abstract

XE examine the impact of the heterostructure design at the scale of the structural and optical properties for yellow light emissio

Extracted data

Related items

Structural and optical characterization of green-yellow light emitting devices with high indium concentrated (In,Ga)N quantum wells

Hussain, Sakhawat

December 2014

Le but de cette thèse a été d'étudier les propriétés structurales et optiques de puits quantiques (P...

Simulation Study of GaN/Al1-xGaxN Quantum Well (QW) Operating in the UV Region

Jawatankuasa Kerja PSM USM

This study describes the characteristics of GaN/Al1-xGaxN quantum well (QW) operating in the UV regi...

Microscopic Theory of Optical Nonlinearities and Spontaneous Emission Lifetime in Group-III Nitride Quantum Wells

Chow, W.
Kira, M.
Koch, S.W.

March 1999

Microscopic calculations of the absorption/gain and luminescence spectra are presented for wide band...

Internal quantum efficiency in yellow-amber light emitting AlGaN-InGaN-GaN heterostructures

Ngo, Thi huong
Gil, Bernard
Valvin, Pierre
Damilano, B.
Lekhal, Kaddour
De miery, Philippe

September 2015

We determine the internal quantum efficiency of strain-balanced AlGaN-InGaN-GaN hetero-structures de...

Strain compensation in InGaN-based multiple quantum wells using AlGaN interlayers

Syed Ahmed Al Muyeed
Wei Sun
Xiongliang Wei
Renbo Song
Daniel D. Koleske
Nelson Tansu
Jonathan J. Wierer Jr.

October 2017

Data are presented on strain compensation in InGaN-based multiple quantum wells (MQW) using AlGaN in...

Effect of AlGaN interlayer on the GaN/InGaN/GaN/AlGaN multi-quantum wells structural properties toward red light emission

Ruterana, Pierre
Morales, Magali
Chery, Nicolas
Ngo, Thi, Huong
Chauvat, Marie-Pierre
Lekhal, Kaddour
Damilano, Benjamin
Gil, Bernard

January 2020

International audienceIn this work, InGaN/GaN Multi-Quantum Wells (MQWs) with strain compensating Al...

TANSU N.: ‘Self-consistent analysis of strain-compensated InGaN–AlGaN quantum wells for lasers and light-emitting diodes

Hongping Zhao
Ronald A. Arif
Yik-khoon Ee
Nelson Tansu

January 2016

Abstract—Strain-compensated InGaN–AlGaN quantum wells (QW) are investigated as improved active regio...

Study of InGaN quantum wells for light emitting devices

Zhang, Liyang

August 2013

Group-III nitrides are successively applied for a variety of optical and electronic devices thanks t...

Group III-Nitride heterostructures: From materials research to devices

Wagner, J.
Obloh, H.
Kunzer, M.
Schlotter, P.
Pletschen, W.
Kiefer, R.
Kaufmann, U.
Köhler, K.

January 2000

Group III-nitride based heterostructures are of rapidly growing importance for the fabrication of sh...

Optical gain in zinc-blende GaN/Ga1-xAlxN strained quantum well laser

Fan WJ
Li MF
Chong TC
Xia JB
Fan WJ NATL UNIV SINGAPOREDEPT ELECT ENGNCTR OPTOELECT10 KENT RIDGE CRESCENTSINGAPORE 119260SINGAPORE.

January 1996

Based on the valence subbands of the zinc-blende GaN/Ga0.85Al0.15N strained quantum wells obtained b...

Intersubband energies in Al1-yInyN/Ga1-xInxN heterostructures with lattice constant close to aGaN

Akabli, H.
Almaggoussi, A.
Abounadi, A.
Rajira, A.
Berland, Kristian
Andersson, Thorvald

January 2012

We have studied the conduction band profile and the intersubband transition energy, E-12, of Al1-yIn...

Valence hole subbands and optical gain spectra of GaN/Ga1-xAlxN strained quantum wells

Fan WJ
Li MF
Chong TC
Xia JB
Fan WJ NATL UNIV SINGAPOREDEPT ELECT ENGNCTR OPTOELECTR10 KENT RIDGE CRESCENTSINGAPORE 119260SINGAPORE.

January 1996

The valence hole subbands, TE and TM mode optical gains, transparency carrier density, and radiative...

Designing strain-balanced GaN/AlGaN quantum well structures: Application to intersubband devices at 1.3 and 1.55 mu m wavelengths

Jovanovic, V.D.
Ikonic, Z.
Indjin, D.
Harrison, P.
Milanovic, V.
Soref, R.A.

March 2003

A criterion for strain balancing of wurtzite group-III nitride-based multilayer heterostructures is ...

Effect of strain relaxation on active-region formation in InGaN/(Al)GaN heterostructures for green LEDs

Sakharov, A.V.
Lundin, W.V.
Zavarin, E.E.
Sinitsyn, M.A.
Nikolaev, A.E.
Usov, S.O.
Sizov, V.S.
Mikhailovsky, G.A.
Cherkashin, Nikolay
Hÿtch, Martin
Hüe, Florian
Yakovlev, E.V.
Lobanova, A.V.
Tsatsulnikov, A.F.

January 2009

International audienceProcesses of active-region formation for green LEDs on the basis of multilayer...

GaN multiple quantum well

?????????

June 2013

In (x) Ga1-x N/GaN multiple quantum wells (MQWs), composed of 28- In0.29Ga0.71N wells and 24- In0.23...

Structural and optical characterization of green-yellow light emitting devices with high indium concentrated (In,Ga)N quantum wells

Hussain, Sakhawat

December 2014

Le but de cette thèse a été d'étudier les propriétés structurales et optiques de puits quantiques (P...

Simulation Study of GaN/Al1-xGaxN Quantum Well (QW) Operating in the UV Region

Jawatankuasa Kerja PSM USM

This study describes the characteristics of GaN/Al1-xGaxN quantum well (QW) operating in the UV regi...

Microscopic Theory of Optical Nonlinearities and Spontaneous Emission Lifetime in Group-III Nitride Quantum Wells

Chow, W.
Kira, M.
Koch, S.W.

March 1999

Microscopic calculations of the absorption/gain and luminescence spectra are presented for wide band...

Internal quantum efficiency in yellow-amber light emitting AlGaN-InGaN-GaN heterostructures

Ngo, Thi huong
Gil, Bernard
Valvin, Pierre
Damilano, B.
Lekhal, Kaddour
De miery, Philippe

September 2015

We determine the internal quantum efficiency of strain-balanced AlGaN-InGaN-GaN hetero-structures de...

Strain compensation in InGaN-based multiple quantum wells using AlGaN interlayers

Syed Ahmed Al Muyeed
Wei Sun
Xiongliang Wei
Renbo Song
Daniel D. Koleske
Nelson Tansu
Jonathan J. Wierer Jr.

October 2017

Data are presented on strain compensation in InGaN-based multiple quantum wells (MQW) using AlGaN in...

Effect of AlGaN interlayer on the GaN/InGaN/GaN/AlGaN multi-quantum wells structural properties toward red light emission

Ruterana, Pierre
Morales, Magali
Chery, Nicolas
Ngo, Thi, Huong
Chauvat, Marie-Pierre
Lekhal, Kaddour
Damilano, Benjamin
Gil, Bernard

January 2020

International audienceIn this work, InGaN/GaN Multi-Quantum Wells (MQWs) with strain compensating Al...

TANSU N.: ‘Self-consistent analysis of strain-compensated InGaN–AlGaN quantum wells for lasers and light-emitting diodes

Hongping Zhao
Ronald A. Arif
Yik-khoon Ee
Nelson Tansu

January 2016

Abstract—Strain-compensated InGaN–AlGaN quantum wells (QW) are investigated as improved active regio...

Study of InGaN quantum wells for light emitting devices

Zhang, Liyang

August 2013

Group-III nitrides are successively applied for a variety of optical and electronic devices thanks t...

Group III-Nitride heterostructures: From materials research to devices

Wagner, J.
Obloh, H.
Kunzer, M.
Schlotter, P.
Pletschen, W.
Kiefer, R.
Kaufmann, U.
Köhler, K.

January 2000

Group III-nitride based heterostructures are of rapidly growing importance for the fabrication of sh...

Optical gain in zinc-blende GaN/Ga1-xAlxN strained quantum well laser

Fan WJ
Li MF
Chong TC
Xia JB
Fan WJ NATL UNIV SINGAPOREDEPT ELECT ENGNCTR OPTOELECT10 KENT RIDGE CRESCENTSINGAPORE 119260SINGAPORE.

January 1996

Based on the valence subbands of the zinc-blende GaN/Ga0.85Al0.15N strained quantum wells obtained b...

Intersubband energies in Al1-yInyN/Ga1-xInxN heterostructures with lattice constant close to aGaN

Akabli, H.
Almaggoussi, A.
Abounadi, A.
Rajira, A.
Berland, Kristian
Andersson, Thorvald

January 2012

We have studied the conduction band profile and the intersubband transition energy, E-12, of Al1-yIn...

Valence hole subbands and optical gain spectra of GaN/Ga1-xAlxN strained quantum wells

Fan WJ
Li MF
Chong TC
Xia JB
Fan WJ NATL UNIV SINGAPOREDEPT ELECT ENGNCTR OPTOELECTR10 KENT RIDGE CRESCENTSINGAPORE 119260SINGAPORE.

January 1996

The valence hole subbands, TE and TM mode optical gains, transparency carrier density, and radiative...

Designing strain-balanced GaN/AlGaN quantum well structures: Application to intersubband devices at 1.3 and 1.55 mu m wavelengths

Jovanovic, V.D.
Ikonic, Z.
Indjin, D.
Harrison, P.
Milanovic, V.
Soref, R.A.

March 2003

A criterion for strain balancing of wurtzite group-III nitride-based multilayer heterostructures is ...

Effect of strain relaxation on active-region formation in InGaN/(Al)GaN heterostructures for green LEDs

Sakharov, A.V.
Lundin, W.V.
Zavarin, E.E.
Sinitsyn, M.A.
Nikolaev, A.E.
Usov, S.O.
Sizov, V.S.
Mikhailovsky, G.A.
Cherkashin, Nikolay
Hÿtch, Martin
Hüe, Florian
Yakovlev, E.V.
Lobanova, A.V.
Tsatsulnikov, A.F.

January 2009

International audienceProcesses of active-region formation for green LEDs on the basis of multilayer...

GaN multiple quantum well

?????????

June 2013

In (x) Ga1-x N/GaN multiple quantum wells (MQWs), composed of 28- In0.29Ga0.71N wells and 24- In0.23...

Structural and optical characterization of green-yellow light emitting devices with high indium concentrated (In,Ga)N quantum wells

Hussain, Sakhawat

December 2014

Le but de cette thèse a été d'étudier les propriétés structurales et optiques de puits quantiques (P...

Simulation Study of GaN/Al1-xGaxN Quantum Well (QW) Operating in the UV Region

Jawatankuasa Kerja PSM USM

This study describes the characteristics of GaN/Al1-xGaxN quantum well (QW) operating in the UV regi...

Microscopic Theory of Optical Nonlinearities and Spontaneous Emission Lifetime in Group-III Nitride Quantum Wells

Chow, W.
Kira, M.
Koch, S.W.

March 1999

Microscopic calculations of the absorption/gain and luminescence spectra are presented for wide band...