MOSFET gate drivers are important in modern power electronics due to the ubiquity of applications that require the fast and controlled switching of power MOSFETs. A controller serves as the first building block in many such systems, but with limited drive current and logic level voltage signals, it is unable to directly turn on a discrete power MOSFET. Gate drivers serve as the critical interface between the controller output and the power MOSFET. This thesis explores some of the considerations in designing a gate driver for hardswitching applications and presents a new design for an area-efficient integrated gate driver. Simulation results show that, for a given die area, the new design gives better performance than existing topologies....
Modern power semiconductor devices have low capacitances and can therefore achieve very fast switchi...
A series connection of SiC MOSFETs for kV blocking capability can enable more design flexibility in ...
Active Gate Drives (AGDs) tailor the signal applied to the gates of power metal-oxide-semiconductor ...
This article covers the design of highly integrated gate drivers and level shifters for high-speed, ...
A novel gate driver design is proposed to improve the conversion efficiency of DC-DC converters. Con...
The main purpose of this paper is to demonstrate a systematic approach to design high performance ga...
This paper focuses on design and comparison ofoptimization methods for the output stage circuit of M...
The metal oxide semiconductor field effect transistor (MOSFET) drivers are among the main components...
International audienceThis paper presents the study on gate driver circuitries implemented to drive ...
A gate driver approach is presented for the reduction of turn-on losses in hard switching applicatio...
To overcome the limitations of existing gate drive topologies an improved gate drive concept is prop...
grantor: University of TorontoThis thesis presents the design and implementation of a mono...
International audienceNowadays new Silicon Carbide (SiC) MOSFET transistors are available on the mar...
Low conduction losses are one technical advantage of SiC-MOSFETs compared to conventional IGBTs but ...
SIC-MOSFETs are commonly used in high power inverter and converter circuits and can require signific...
Modern power semiconductor devices have low capacitances and can therefore achieve very fast switchi...
A series connection of SiC MOSFETs for kV blocking capability can enable more design flexibility in ...
Active Gate Drives (AGDs) tailor the signal applied to the gates of power metal-oxide-semiconductor ...
This article covers the design of highly integrated gate drivers and level shifters for high-speed, ...
A novel gate driver design is proposed to improve the conversion efficiency of DC-DC converters. Con...
The main purpose of this paper is to demonstrate a systematic approach to design high performance ga...
This paper focuses on design and comparison ofoptimization methods for the output stage circuit of M...
The metal oxide semiconductor field effect transistor (MOSFET) drivers are among the main components...
International audienceThis paper presents the study on gate driver circuitries implemented to drive ...
A gate driver approach is presented for the reduction of turn-on losses in hard switching applicatio...
To overcome the limitations of existing gate drive topologies an improved gate drive concept is prop...
grantor: University of TorontoThis thesis presents the design and implementation of a mono...
International audienceNowadays new Silicon Carbide (SiC) MOSFET transistors are available on the mar...
Low conduction losses are one technical advantage of SiC-MOSFETs compared to conventional IGBTs but ...
SIC-MOSFETs are commonly used in high power inverter and converter circuits and can require signific...
Modern power semiconductor devices have low capacitances and can therefore achieve very fast switchi...
A series connection of SiC MOSFETs for kV blocking capability can enable more design flexibility in ...
Active Gate Drives (AGDs) tailor the signal applied to the gates of power metal-oxide-semiconductor ...