HVPE growth of corundum-structured α-Ga2O3 on sapphire substrates with α-Cr2O3 buffer layer
- Stepanov, Sergey I.
- Nikolaev, Vladimir I.
- Almaev, Aleksei V.
- Pechnikov, Aleksei I.
- Scheglov, M. P.
- Chikiryaka, A. V.
- Kushnarev, Bogdan O.
- Polyakov, A. Y.
DOIAbstract
Gallium oxide films were grown by HVPE on (0001) sapphire substrates with and without α-Cr2O3 buffer produced by RF magnetron sputtering. Deposition on bare sapphire substrates resulted in a mixture of α-Ga2O3 and ε-Ga2O3 phases with a dislocation density of about 2∙1010 cm-2. The insertion of α-Cr2O3 buffer layers resulted in phase-pure α-Ga2O3 films and a fourfold reduction of the dislocation density to 5∙109 cm-2
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