Picosecond pulse generation with 1.5 μm passively modelocked surface-emitting semiconductor laser
- Hoogland, S.
- Garnache, A.
- Sagnes, I.
- Paldus, B.
- Weingarten, K.J.
- Grange, R.
- Haiml, M.
- Keller, U.
- Tropper, A.C.
Publication date
January 2003
DOI Publisher
Institution of Engineering and Technology (IET)Abstract
International audienceThe authors report the first demonstration of an optically pumped passively modelocked surface-emitting semiconductor laser operating in the 1.5 μm region. The modelocked laser emits pulses of 6.5 ps full width at half maximum duration with an average power of 13.5 mW at a fundamental repetition rate of 1.342 GHz. The peak power was 1.6 W
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