Light emitting diodes on silicon substrates: preliminary results
- Bondi, Alexandre
- Guo, Weiming
- Pedesseau, Laurent
- Richard, Soline
- Folliot, Hervé
- Cornet, Charles
- Labbé, Christophe
- Gicquel-Guézo, Maud
- Le Corre, Alain
- Even, Jacky
- Moréac, Alain
- Loualiche, Slimane
DOIAbstract
International audienceWe propose to grow III-V quantum nanostructures by molecular beam epitaxy on GaP substrates and GaP layers almost lattice-matched to Si. These nanostructures will be used as active zone in light emitters on silicon. We first present photoluminescence results for GaAsP/GaP QWs. A comparison with electronic band lineups is performed. The GaP/Si interface is studied by Raman spectroscopy
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