Structural charaterisation of GaP/Si nanolayers

International audienceGrowth of GaP (III-V semiconductor) directly deposited on Si has been proposed to overcome the problems of lattice mismatch, in the context of monolithic integration of photonics on silicon. [1] However, long-term stable device per-formance implies reproducible achievement of defect-free interfaces between III-V and Si. Among them, antiphase do-mains (APD) and microtwins (MT) are quite difficult to avoid. And characterization means sensitive to these defects must employed for optimization of the growth pocess and qualification of the grown layers. Lab setup and synchrotron XRD is combined with TEM and AFM osbervations