Impact of SOI Substrate on the Radiation Response of UltraThin Transistors Down to the 20 nm Node
- Gaillardin, M.
- Martinez, M.
- Paillet, Philippe
- Andrieu, F.
- Girard, Sylvain
- Raine, Melanie
- Marcandella, Claude
- Richard, Nicolas
- Faynot, O.
Publication date
August 2013
DOI Publisher
Institute of Electrical and Electronics Engineers (IEEE)Abstract
International audienceIn this paper we investigate the Total Ionizing Dose (TID) response of an UltraThin Buried-OXide (UTBOX) on a Fully Depleted Silicon-On-Insulator (FDSOI) high-k/metal gate technology. The impact of thinning the BOX and of the use of a Ground Plane (GP) at the back side of the BOX on the TID behavior are discussed by comparing their results to ionizing radiation experiments performed on reference FDSOI devices
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