Impact of mechanical strain on the charge collection mechanisms of nanometer scaled SOI devices under heavy ion and pulsed laser irradiation

Effects of Ionizing Radiation on Digital Single Event Transients in a 180-nm Fully Depleted SOI Process

Keast, Craig L.
Wyatt, Peter W.
Gouker, Pascale M.
Gadlage, Matthew J.
Narasimham, Balaji
Bhuva, Bharat L.
Hughes, Harold
McMarr, Patrick
McMorrow, Dale

September 2009

Effects of ionizing radiation on single event transients are reported for Fully Depleted SOI (FDSOI)...

Space and military radiation effects in silicon-on-insulator devices

Schwank, J.R.

September 1996

Advantages in transient ionizing and single-event upset (SEU) radiation hardness of silicon-on-insul...

Impact Of Oxide Trap Charge On Performance Of Strained Fully Depleted Soi Metal-Gate Mosfet

Yeh, W. K.
Wang, C. C.
Hsu, C. W.
Fang, Y. K.
Wu, S. M.

December 2009

The impact of strain induced oxide trap charge on the performance and reliability of contact etch st...

Impact of mechanical strain on the charge collection mechanisms of nanometer scaled SOI devices under heavy ion and pulsed laser irradiation

Gaillardin, M.
Raine, Melanie
Duhamel, O.
Girard, Sylvain
Paillet, Philippe
Mcmorrow, D.
Warner, J.
Faynot, O.
Barraud, S.
Andrieu, F.

September 2013

International audienceWe investigate the impact of performance boosters using mechanical stress on t...

Strain and Silicon Film Thickness on Charge Collection Mechanisms of Nanometer Scaled SOI Devices Under Heavy Ion and Pulsed Laser Irradiation

Gaillardin, M.
Raine, Melanie
Duhamel, O.
Girard, Sylvain
Paillet, Philippe
Mcmorrow, D.
Warner, J.
Andrieu, F.
Barraud, S.
Roche, Nicolas

June 2014

International audienceWe investigate the impact of performance boosters using mechanical stress on t...

Heavy-ion-induced digital single event transients in a 180 nm fully depleted SOI process

Gouker, Pascale M.
Gadlage, Matthew J.
Bhuva, Bharat L.
Narasimham, Balaji
Schrimpf, Ronald D.

December 2009

Heavy-ion-induced single events transients (SETs) in advanced digital circuits are a significant rel...

Effects of heavy-ion strikes on fully depleted SOI MOSFETs with ultra-thin gate oxide and different strain-inducing techniques

Griffoni, A
Gerardin, Simone
Cester, Andrea
Paccagnella, Alessandro
Simoen, E
Claeys, C.

January 2007

We study the immediate and long-term effects of heavy-ion strikes on 65-nm Fully Depleted SOI MOSFET...

Experimental study on heavy ion single event effects in SOI SRAMs

Li, YH (Li Yonghong)
He, CH (He Chaohui)
Zhao, FZ (Zhao Fazhan)
Guo, TL (Guo Tianlei)
Liu, G (Liu Gang)
Han, ZS (Han Zhengsheng)
Liu, J (Liu Jie)
Guo, G (Guo Gang)

January 2009

Silicon-on-insulator (SOI) technologies have been developed for radiation-hardened military and spac...

Single-Event Upset and Snapback in Silicon-on-Insulator Devices and Integrated Circuits

DODD,PAUL E.
SHANEYFELT,MARTY R.
WALSH,DAVID S.
SCHWANK,JAMES R.
HASH,GERALD L.
LOEMKER,RHONDA ANN
DRAPER,BRUCE L.
WINOKUR,PETER S.

August 2000

The characteristics Of ion-induced charge collection and single-event upset are studied in SOI trans...

Single-event upset and snapback in silicon-on-insulator devices

DODD,PAUL E.
SHANEYFELT,MARTY R.
SCHWANK,JAMES R.
HASH,GERALD L.
DRAPER,BRUCE L.
WINOKUR,PETER S.

February 2000

SEU is studied in SOI transistors and circuits with various body tie structures. The importance of i...

Pulse quenching induced by multi-collection effects in 45 nm silicon-on-insulator technology

Artola, Laurent
Hubert, Guillaume

October 2016

International audienceThis paper presents the analysis of pulse quenching effects induced in silicon...

Analysis of Nanowire Field-Effect Transistors SET Response: Geometrical Considerations

Gaillardin, Marc
Raine, Mélanie
Martinez, Martial
Duhamel, Olivier
Riffaud, Jonathan
Lagutere, Thierry
Marcandella, Claude
Paillet, Philippe
Richard, Nicolas
Vinet, Maud
Andrieu, François
Barraud, Sylvain

September 2018

International audienceThe single-event transient (SET) response of silicon-on-insulator (SOI) tri-ga...

Effects of Heavy-Ion Strikes on Fully Depleted SOI MOSFETs With Ultra-Thin Gate Oxide and Different Strain-Inducing Techniques

Griffoni, A.
Gerardin, S.
Cester, Andrea
Paccagnella, A.
Simoen, E.
Claeys, C.

January 2007

We present new results on electrostatic discharge on SOI MOSFETs irradiated with heavy-ion. Irradiat...

Electrical Stresses on Ultra-Thin Gate Oxide SOI MOSFETs after Irradiation

Cester, Andrea
Gerardin, Simone
Paccagnella, Alessandro
E., Simoen
C., Claeys

January 2005

We present the first experimental data about the wear-out of a 0.1um partially depleted SOI CMOS tec...

Investigations of the ionizing radiation induced effects in ultra-thin strained-silicon layers on insulator using confocal microscopy measurements

Gaillardin, M.
Girard, Sébastien
Ouerdane, Y.
Boukenter, A.
Andrieu, F.
Tabone, C.
Faynot, O.

February 2011

International audienceThis study describes investigations on the ionizing radiation effects induced ...

Effects of Ionizing Radiation on Digital Single Event Transients in a 180-nm Fully Depleted SOI Process

Keast, Craig L.
Wyatt, Peter W.
Gouker, Pascale M.
Gadlage, Matthew J.
Narasimham, Balaji
Bhuva, Bharat L.
Hughes, Harold
McMarr, Patrick
McMorrow, Dale

September 2009

Effects of ionizing radiation on single event transients are reported for Fully Depleted SOI (FDSOI)...

Space and military radiation effects in silicon-on-insulator devices

Schwank, J.R.

September 1996

Advantages in transient ionizing and single-event upset (SEU) radiation hardness of silicon-on-insul...

Impact Of Oxide Trap Charge On Performance Of Strained Fully Depleted Soi Metal-Gate Mosfet

Yeh, W. K.
Wang, C. C.
Hsu, C. W.
Fang, Y. K.
Wu, S. M.

December 2009

The impact of strain induced oxide trap charge on the performance and reliability of contact etch st...

Impact of mechanical strain on the charge collection mechanisms of nanometer scaled SOI devices under heavy ion and pulsed laser irradiation

Gaillardin, M.
Raine, Melanie
Duhamel, O.
Girard, Sylvain
Paillet, Philippe
Mcmorrow, D.
Warner, J.
Faynot, O.
Barraud, S.
Andrieu, F.

September 2013

International audienceWe investigate the impact of performance boosters using mechanical stress on t...

Strain and Silicon Film Thickness on Charge Collection Mechanisms of Nanometer Scaled SOI Devices Under Heavy Ion and Pulsed Laser Irradiation

Gaillardin, M.
Raine, Melanie
Duhamel, O.
Girard, Sylvain
Paillet, Philippe
Mcmorrow, D.
Warner, J.
Andrieu, F.
Barraud, S.
Roche, Nicolas

June 2014

International audienceWe investigate the impact of performance boosters using mechanical stress on t...

Heavy-ion-induced digital single event transients in a 180 nm fully depleted SOI process

Gouker, Pascale M.
Gadlage, Matthew J.
Bhuva, Bharat L.
Narasimham, Balaji
Schrimpf, Ronald D.

December 2009

Heavy-ion-induced single events transients (SETs) in advanced digital circuits are a significant rel...

Effects of heavy-ion strikes on fully depleted SOI MOSFETs with ultra-thin gate oxide and different strain-inducing techniques

Griffoni, A
Gerardin, Simone
Cester, Andrea
Paccagnella, Alessandro
Simoen, E
Claeys, C.

January 2007

We study the immediate and long-term effects of heavy-ion strikes on 65-nm Fully Depleted SOI MOSFET...

Experimental study on heavy ion single event effects in SOI SRAMs

Li, YH (Li Yonghong)
He, CH (He Chaohui)
Zhao, FZ (Zhao Fazhan)
Guo, TL (Guo Tianlei)
Liu, G (Liu Gang)
Han, ZS (Han Zhengsheng)
Liu, J (Liu Jie)
Guo, G (Guo Gang)

January 2009

Silicon-on-insulator (SOI) technologies have been developed for radiation-hardened military and spac...

Single-Event Upset and Snapback in Silicon-on-Insulator Devices and Integrated Circuits

DODD,PAUL E.
SHANEYFELT,MARTY R.
WALSH,DAVID S.
SCHWANK,JAMES R.
HASH,GERALD L.
LOEMKER,RHONDA ANN
DRAPER,BRUCE L.
WINOKUR,PETER S.

August 2000

The characteristics Of ion-induced charge collection and single-event upset are studied in SOI trans...

Single-event upset and snapback in silicon-on-insulator devices

DODD,PAUL E.
SHANEYFELT,MARTY R.
SCHWANK,JAMES R.
HASH,GERALD L.
DRAPER,BRUCE L.
WINOKUR,PETER S.

February 2000

SEU is studied in SOI transistors and circuits with various body tie structures. The importance of i...

Pulse quenching induced by multi-collection effects in 45 nm silicon-on-insulator technology

Artola, Laurent
Hubert, Guillaume

October 2016

International audienceThis paper presents the analysis of pulse quenching effects induced in silicon...

Analysis of Nanowire Field-Effect Transistors SET Response: Geometrical Considerations

Gaillardin, Marc
Raine, Mélanie
Martinez, Martial
Duhamel, Olivier
Riffaud, Jonathan
Lagutere, Thierry
Marcandella, Claude
Paillet, Philippe
Richard, Nicolas
Vinet, Maud
Andrieu, François
Barraud, Sylvain

September 2018

International audienceThe single-event transient (SET) response of silicon-on-insulator (SOI) tri-ga...

Effects of Heavy-Ion Strikes on Fully Depleted SOI MOSFETs With Ultra-Thin Gate Oxide and Different Strain-Inducing Techniques

Griffoni, A.
Gerardin, S.
Cester, Andrea
Paccagnella, A.
Simoen, E.
Claeys, C.

January 2007

We present new results on electrostatic discharge on SOI MOSFETs irradiated with heavy-ion. Irradiat...

Electrical Stresses on Ultra-Thin Gate Oxide SOI MOSFETs after Irradiation

Cester, Andrea
Gerardin, Simone
Paccagnella, Alessandro
E., Simoen
C., Claeys

January 2005

We present the first experimental data about the wear-out of a 0.1um partially depleted SOI CMOS tec...

Investigations of the ionizing radiation induced effects in ultra-thin strained-silicon layers on insulator using confocal microscopy measurements

Gaillardin, M.
Girard, Sébastien
Ouerdane, Y.
Boukenter, A.
Andrieu, F.
Tabone, C.
Faynot, O.

February 2011

International audienceThis study describes investigations on the ionizing radiation effects induced ...

Effects of Ionizing Radiation on Digital Single Event Transients in a 180-nm Fully Depleted SOI Process

Keast, Craig L.
Wyatt, Peter W.
Gouker, Pascale M.
Gadlage, Matthew J.
Narasimham, Balaji
Bhuva, Bharat L.
Hughes, Harold
McMarr, Patrick
McMorrow, Dale

September 2009

Effects of ionizing radiation on single event transients are reported for Fully Depleted SOI (FDSOI)...

Space and military radiation effects in silicon-on-insulator devices

Schwank, J.R.

September 1996

Advantages in transient ionizing and single-event upset (SEU) radiation hardness of silicon-on-insul...

Impact Of Oxide Trap Charge On Performance Of Strained Fully Depleted Soi Metal-Gate Mosfet

Yeh, W. K.
Wang, C. C.
Hsu, C. W.
Fang, Y. K.
Wu, S. M.

December 2009

The impact of strain induced oxide trap charge on the performance and reliability of contact etch st...

Impact of mechanical strain on the charge collection mechanisms of nanometer scaled SOI devices under heavy ion and pulsed laser irradiation

Abstract

Extracted data

Impact of mechanical strain on the charge collection mechanisms of nanometer scaled SOI devices under heavy ion and pulsed laser irradiation

Abstract

Extracted data

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