International audienceThe spin dynamics of a resident carrier, hole or electron, in singly charged InAs/GaAs quantum dots has been measured by pump-probe experiments. The relative strength of the hole to the electron hyperfine couplings with nuclei is obtained by studying the magnetic-field dependence of the resident-carrier spin polarization. We find, in good agreement with recent theoretical studies, that the hole hyperfine coupling is ten times smaller than the electron one
The spin diffusion concept provides a classical description of a purely quantum-mechanical evolution...
GaAs/AlGaAs quantum dots grown by in situ droplet etching and nanohole in-filling offer a combinatio...
A huge effort is underway to develop semiconductor nanostructures as low-noise hosts for qubits. The...
International audienceThe spin dynamics of a resident carrier, hole or electron, in singly charged I...
International audienceThe spin dynamics of a resident carrier, hole or electron, in singly charged I...
International audienceThe spin dynamics of a resident carrier, hole or electron, in singly charged I...
International audienceThe spin dynamics of a resident carrier, hole or electron, in singly charged I...
International audienceThe spin dynamics of a resident carrier, hole or electron, in singly charged I...
We have studied the electron spin relaxation in semiconductor InAs/GaAs quantum dots by time-resolve...
Symposium on Novel Materials and Devices for Spintronics, San Francisco, CA, APR 14-17, 2009Internat...
A huge effort is underway to develop semiconductor nanostructures as low-noise qubits. A key source ...
We review and summarize recent theoretical and experimental work on electron spin dynamics in quantu...
We review and summarize recent theoretical and experimental work on electron spin dynamics in quantu...
Electrons in InAs/GaAs quantum dots are strong candidates for qubits due to quantum confinement of t...
Dynamics of nuclear spin decoherence and nuclear spin flip-flops in self-assembled InGaAs/GaAs quant...
The spin diffusion concept provides a classical description of a purely quantum-mechanical evolution...
GaAs/AlGaAs quantum dots grown by in situ droplet etching and nanohole in-filling offer a combinatio...
A huge effort is underway to develop semiconductor nanostructures as low-noise hosts for qubits. The...
International audienceThe spin dynamics of a resident carrier, hole or electron, in singly charged I...
International audienceThe spin dynamics of a resident carrier, hole or electron, in singly charged I...
International audienceThe spin dynamics of a resident carrier, hole or electron, in singly charged I...
International audienceThe spin dynamics of a resident carrier, hole or electron, in singly charged I...
International audienceThe spin dynamics of a resident carrier, hole or electron, in singly charged I...
We have studied the electron spin relaxation in semiconductor InAs/GaAs quantum dots by time-resolve...
Symposium on Novel Materials and Devices for Spintronics, San Francisco, CA, APR 14-17, 2009Internat...
A huge effort is underway to develop semiconductor nanostructures as low-noise qubits. A key source ...
We review and summarize recent theoretical and experimental work on electron spin dynamics in quantu...
We review and summarize recent theoretical and experimental work on electron spin dynamics in quantu...
Electrons in InAs/GaAs quantum dots are strong candidates for qubits due to quantum confinement of t...
Dynamics of nuclear spin decoherence and nuclear spin flip-flops in self-assembled InGaAs/GaAs quant...
The spin diffusion concept provides a classical description of a purely quantum-mechanical evolution...
GaAs/AlGaAs quantum dots grown by in situ droplet etching and nanohole in-filling offer a combinatio...
A huge effort is underway to develop semiconductor nanostructures as low-noise hosts for qubits. The...