International audienceThe effect of surfaces on the optical properties of GaAs nanowires is evidenced by comparing nanowires with or without an AlGaAs capping shell as a function of the diameter. We find that the optical properties of unpassivated nanowires are governed by Fermi-level pinning, whereas, the optical properties of passivated nanowires are mainly governed by surface recombinations. Finally, we measure a surface recombination velocity of 3 x 10(3) cm s(-1) one order of magnitude lower than values previously reported for (110) GaAs surfaces. These results will serve as guidance for the application of nanowires in solar cell and light emitting devices
Bare unpassivated GaAs nanowires feature relatively high electron mobilities (400–2100 cm$^{2}$ V$^{...
III-V semiconductor nanowires are promising candidates for optoelectronic device applications due to...
Bare unpassivated GaAs nanowires feature relatively high electron mobilities (400–2100 cm2 V−1 s−1) ...
International audienceThe effect of surfaces on the optical properties of GaAs nanowires is evidence...
The semiconductor nanowire architecture provides opportunities for non-planar electronics and optoel...
We report a systematic study of carrier dynamics in Al<sub><i>x</i></sub>Ga<sub>1–<i>x</i></sub>As-p...
III-V semiconductor nanowires behave as optical antennae because of their shape anisotropy and high ...
III-V semiconductor nanowires behave as optical antennae because of their shape anisotropy and high ...
III-V semiconductor nanowires behave as optical antennae because of their shape anisotropy and high ...
III-V semiconductor nanowires behave as optical antennae because of their shape anisotropy and high ...
III-V semiconductor nanowires behave as optical antennae because of their shape anisotropy and high ...
Over the recent years semiconductor nanowires have gained much attention for their potential to eith...
The semiconductor nanowire architecture provides opportunities for non-planar electronics and optoel...
The optical properties of semiconductor nanowires are both important from a fundamental materials ph...
The optical properties of semiconductor nanowires are both important from a fundamental materials ph...
Bare unpassivated GaAs nanowires feature relatively high electron mobilities (400–2100 cm$^{2}$ V$^{...
III-V semiconductor nanowires are promising candidates for optoelectronic device applications due to...
Bare unpassivated GaAs nanowires feature relatively high electron mobilities (400–2100 cm2 V−1 s−1) ...
International audienceThe effect of surfaces on the optical properties of GaAs nanowires is evidence...
The semiconductor nanowire architecture provides opportunities for non-planar electronics and optoel...
We report a systematic study of carrier dynamics in Al<sub><i>x</i></sub>Ga<sub>1–<i>x</i></sub>As-p...
III-V semiconductor nanowires behave as optical antennae because of their shape anisotropy and high ...
III-V semiconductor nanowires behave as optical antennae because of their shape anisotropy and high ...
III-V semiconductor nanowires behave as optical antennae because of their shape anisotropy and high ...
III-V semiconductor nanowires behave as optical antennae because of their shape anisotropy and high ...
III-V semiconductor nanowires behave as optical antennae because of their shape anisotropy and high ...
Over the recent years semiconductor nanowires have gained much attention for their potential to eith...
The semiconductor nanowire architecture provides opportunities for non-planar electronics and optoel...
The optical properties of semiconductor nanowires are both important from a fundamental materials ph...
The optical properties of semiconductor nanowires are both important from a fundamental materials ph...
Bare unpassivated GaAs nanowires feature relatively high electron mobilities (400–2100 cm$^{2}$ V$^{...
III-V semiconductor nanowires are promising candidates for optoelectronic device applications due to...
Bare unpassivated GaAs nanowires feature relatively high electron mobilities (400–2100 cm2 V−1 s−1) ...