TEM and cathodoluminescence with nanometric spatial resolution on BN nanostructures

International audienceHexagonal boron nitride (h-BN) is a wide band gap semiconductor (6.4 eV), which can be synthesized, as graphite, its carbon analog, as bulk crystallites, nanotubes and layers. These structures meet a growing interest for deep UV LED and graphene engineering. In this talk, we will review the interplay between the structure, defects and luminescence properties of different BN structures and how these properties can be further exploited for their characterization