International audienceThe radiation hardness of a radiation-hardened-by-design CMOS Image Sensor is validated up to several MGy(SiO2) (>100 Mrad) of TID. The perspectives in terms of further improvements and applications are discusse
International audienceA Radiation Hard CMOS Active Pixel Image Sensor has been designed, manufacture...
International audienceThrough the comparison of several CMOS image sensor technologies (including pa...
The aim of this work is to design and characterize a fully radiation-hardened-by-design CMOS Image ...
International audienceThe radiation hardness of a radiation-hardened-by-design CMOS Image Sensor is ...
The radiation hardness of a radiation-hardened-by-design CMOS Image Sensor is validated up to severa...
International audienceA Radiation Hard CMOS Active Pixel Image Sensor has been designed, manufacture...
International audienceThrough the comparison of several CMOS image sensor technologies (including pa...
The aim of this work is to design and characterize a fully radiation-hardened-by-design CMOS Image ...
International audienceThe radiation hardness of a radiation-hardened-by-design CMOS Image Sensor is ...
The radiation hardness of a radiation-hardened-by-design CMOS Image Sensor is validated up to severa...
International audienceA Radiation Hard CMOS Active Pixel Image Sensor has been designed, manufacture...
International audienceThrough the comparison of several CMOS image sensor technologies (including pa...
The aim of this work is to design and characterize a fully radiation-hardened-by-design CMOS Image ...
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