A High-Power InP Resonant Tunnelling Diode Heterostructure for 300-GHz Oscillator Sources

A high-power double-barrier resonant tunnelling diode (RTD) epitaxial structure in InP technology is reported. The heterostructure exhibits moderate available current density ΔJ≃1.4 mA/μm2 and large voltage swing ΔV≃1.2 V, resulting in a maximum RF power PRF,max≃0.31 mW/um2 , and over 530 GHz bandwidth, being 25 μm2 , 36 μm2 , and 49 μm2 large RTD devices expected to deliver up to 5 mW, 7 mW, and 10 mW at 300 GHz, respectively. Distributed inductors in both coplanar and microstrip geometry are designed through full 3D electromagnetic simulations, proving the feasibility of the proposed approach for the practical realisation of high-power 300-GHz oscillator sources employing low-cost optical lithography