Nerve Agent Sensors Sub-ppm Detection of Nerve Agents Using Chemically Functionalized Silicon Nanoribbon Field-Effect Transistors**

International audienceOrganophosphorus compounds (OPs) represent one of the most important and lethal classes of chemical warfare agents (e.g. sarin, tabun, soman). Highly active volatile OPs are powerful inhibitors of acetylcholinesterase, which is a critical enzyme of the nervous system. [1] The ease of manufacturing OPs based on inexpensive starting materials makes these agents a weapon of choice for terrorist attacks. [2] Thus, the rapid sensing of these nerve agents has recently become an increasingly important research goal. Various approaches have been reported for the detection of these chemical warfare agents including colorimetric and fluorimetric spec-troscopies, [3] enzymatic assays, [4] piezoelectric devices, [5] single-walled carbon nanotube resistors [6] and capacitors. [7] However, these systems are plagued by limitations such as slow response time, moderate selectivity, operational complexity , or limited portability. Field-effect transistors (FET) based on nanomaterials such as semiconducting nanowires, nanoribbons, or carbon nanotubes have been recently explored for chemical and biological detection. [8] Their high effectiveness is mainly ascribed to an extreme sensitivity to electrostatic changes at the surface of the semiconductor and/or modifications of the Schottky barrier at the semiconductor/metal interface. A charge generation in the vicinity of the semiconductor of a FET is known to alter the electrical properties of the device. [9