We investigate the formation of lattice matched single-crystalline Fe3Si/GaAs(001) ferromagnet/semiconductor hybrid structures by Volmer-Weber island growth, starting from the epitaxial growth of isolated Fe3Si islands up to the formation of continuous films as a result of island coalescence. We find coherent defect-free layers exhibiting compositional disorder near the Fe3Si/GaAs - interface for higher growth rates, whereas they are fully ordered for lower growth rates. © 2019 IOP Publishing Ltd
We demonstrate that kinetics play an important role in the epitaxial growth of Fe$_3$GeTe$_2$ (FGT) ...
The theoretical study of Molecular Beam Epitaxy allows us to model and construct an experiment with ...
We have investigated the early stages of evolution of highly strained 2-D InAs layers and 3-D InAs i...
Ferromagnetic Heusler alloys can be used in combination with semiconductors to create spintronic dev...
Thin epitaxial Fe films have been grown on vicinal GaAs(001) substrates and their remanent magnetic ...
Magnetic properties of Fe3Si films with thickness from 2 to 210 monolayers (ML) epitaxially grown on...
[[abstract]]Magnetic properties of Fe3Si films with thickness from 2 to 210 monolayers (ML) epitaxia...
GaAs/Fe3Si core/shell nanowire structures were fabricated by molecular-beam epitaxy on oxidized Si(1...
We study the growth of Fe by molecular beam epitaxy on GaAs (100), (311)A, and (331)A substrates in ...
[[abstract]]High-quality epitaxial Fe3Si films (10 0) were grown on the GaAs (10 0) surface using mo...
Fe3Si/Ge(Fe,Si)/Fe3Si thin-film stacks were grown by a combination of molecular beam epitaxy and sol...
The epitaxial growth of (FeCo)x Ge1-x films on Ge and GaAs (001) substrates has been studied systema...
Co2FeSi/GaAs(110) and Co2FeSi/GaAs(-1-1-1)B hybrid structures were grown by molecular-beam epitaxy (...
Ferromagnet-semiconductor heterostructures are promising materials for the integration of magnetic o...
While it is well known that growth conditions such as temperature greatly affect defect incorporatio...
We demonstrate that kinetics play an important role in the epitaxial growth of Fe$_3$GeTe$_2$ (FGT) ...
The theoretical study of Molecular Beam Epitaxy allows us to model and construct an experiment with ...
We have investigated the early stages of evolution of highly strained 2-D InAs layers and 3-D InAs i...
Ferromagnetic Heusler alloys can be used in combination with semiconductors to create spintronic dev...
Thin epitaxial Fe films have been grown on vicinal GaAs(001) substrates and their remanent magnetic ...
Magnetic properties of Fe3Si films with thickness from 2 to 210 monolayers (ML) epitaxially grown on...
[[abstract]]Magnetic properties of Fe3Si films with thickness from 2 to 210 monolayers (ML) epitaxia...
GaAs/Fe3Si core/shell nanowire structures were fabricated by molecular-beam epitaxy on oxidized Si(1...
We study the growth of Fe by molecular beam epitaxy on GaAs (100), (311)A, and (331)A substrates in ...
[[abstract]]High-quality epitaxial Fe3Si films (10 0) were grown on the GaAs (10 0) surface using mo...
Fe3Si/Ge(Fe,Si)/Fe3Si thin-film stacks were grown by a combination of molecular beam epitaxy and sol...
The epitaxial growth of (FeCo)x Ge1-x films on Ge and GaAs (001) substrates has been studied systema...
Co2FeSi/GaAs(110) and Co2FeSi/GaAs(-1-1-1)B hybrid structures were grown by molecular-beam epitaxy (...
Ferromagnet-semiconductor heterostructures are promising materials for the integration of magnetic o...
While it is well known that growth conditions such as temperature greatly affect defect incorporatio...
We demonstrate that kinetics play an important role in the epitaxial growth of Fe$_3$GeTe$_2$ (FGT) ...
The theoretical study of Molecular Beam Epitaxy allows us to model and construct an experiment with ...
We have investigated the early stages of evolution of highly strained 2-D InAs layers and 3-D InAs i...