For the development and application of GaN-based nanowire structures, it is crucial to understand their fundamental properties. In this work, we provide the nano-scale correlation of the morphological, electrical, and optical properties of GaN/AlGaN nanowire light emitting diodes (LEDs), observed using a combination of spatially and spectrally resolved cathodoluminescence spectroscopy and imaging, electron beam-induced current microscopy, the nano-probe technique, and scanning electron microscopy. To complement the results, the photo- and electro-luminescence were also studied. The interpretation of the experimental data was supported by the results of numerical simulations of the electronic band structure. We characterized two types of nan...
The polarization anisotropy of single GaN nanowires containing Al(x)Ga(1-x)N/GaN multiquantum disc (...
Al, Ga)N light emitting diodes (LEDs), emitting over a large spectral range from 360 nm (GaN) down t...
This thesis aims at studying the intrinsic properties of InGaN/GaN nanowires (NWs) in order to fabri...
The crystal polarity of non-centrosymmetric wurtzite GaN nanowires is determined non-destructively i...
Gallium nitride (GaN) nanowires have potential as nanoscale optoelectronic building blocks that can ...
The crystal polarity of noncentrosymmetric wurtzite GaN nanowires is determined nondestructively in ...
We present a systematic study of the current-voltage characteristics and electroluminescence of gall...
International audienceGaN nanowires (NWs) with an AlN insertion were studied by correlated optoelect...
International audienceIt is demonstrated that the N-polarity of GaN nanowires (NWs) spontaneously nu...
International audienceGaN nanowires (NWs) with an AlN insertion were studied by correlated optoelect...
Using specific conditions, GaN can be epitaxially grown on a large variety of substrates as a nanowi...
We investigate the polarization of excitonic transitions of single dispersed GaN nanowires with a di...
We report observations of electron beam-induced light from GaN nanowires grown by chemical vapor dep...
Scanning electron microscopy allows for the investigation of materials down to the nanometre scale. ...
Nano-scale optoelectronic devices have gained significant attention in recent years. Among these dev...
The polarization anisotropy of single GaN nanowires containing Al(x)Ga(1-x)N/GaN multiquantum disc (...
Al, Ga)N light emitting diodes (LEDs), emitting over a large spectral range from 360 nm (GaN) down t...
This thesis aims at studying the intrinsic properties of InGaN/GaN nanowires (NWs) in order to fabri...
The crystal polarity of non-centrosymmetric wurtzite GaN nanowires is determined non-destructively i...
Gallium nitride (GaN) nanowires have potential as nanoscale optoelectronic building blocks that can ...
The crystal polarity of noncentrosymmetric wurtzite GaN nanowires is determined nondestructively in ...
We present a systematic study of the current-voltage characteristics and electroluminescence of gall...
International audienceGaN nanowires (NWs) with an AlN insertion were studied by correlated optoelect...
International audienceIt is demonstrated that the N-polarity of GaN nanowires (NWs) spontaneously nu...
International audienceGaN nanowires (NWs) with an AlN insertion were studied by correlated optoelect...
Using specific conditions, GaN can be epitaxially grown on a large variety of substrates as a nanowi...
We investigate the polarization of excitonic transitions of single dispersed GaN nanowires with a di...
We report observations of electron beam-induced light from GaN nanowires grown by chemical vapor dep...
Scanning electron microscopy allows for the investigation of materials down to the nanometre scale. ...
Nano-scale optoelectronic devices have gained significant attention in recent years. Among these dev...
The polarization anisotropy of single GaN nanowires containing Al(x)Ga(1-x)N/GaN multiquantum disc (...
Al, Ga)N light emitting diodes (LEDs), emitting over a large spectral range from 360 nm (GaN) down t...
This thesis aims at studying the intrinsic properties of InGaN/GaN nanowires (NWs) in order to fabri...