The merger of the absorption coefficient dispersion, retrieved from transmission by the modified Urbach rule introduced by Ullrich and Bouchenaki [Jpn. J. Appl. Phys. 30, L1285, 1991], with the extended Roosbroeck-Shockley relation reveals that the optical absorption in ZnO distinctively determines the photoluminescence lineshape. Additionally, the ab initio principles employed enable the accurate determination of the carrier lifetime without further specific probing techniques
The mechanism of the commonly observed green photoluminescence (PL) emission in ZnO is still controv...
Zinc oxide (ZnO) is a wide-band-gap semiconductor suitable for many optical and optoelectronic appli...
Zinc oxide (ZnO) is a wide band-gap semiconductor material (Eg=3.37 eV) characterized by many promis...
The merger of the absorption coefficient dispersion, retrieved from transmission by the modified Urb...
The crystal structure of ZnO is wurtzite and the stacking sequence of atomic layers along the “c” ax...
We report photoluminescence (PL) studies of the surface exciton peak in ZnO nanostructures at ∼3.367...
At room temperature, multiphoton absorption- (MPA-) induced photoluminescence in ZnO strongly driven...
The chemical identification of donor bound excitons in ZnO has been studied using radioactive ions. ...
Ce travail porte sur l'étude des propriétés optiques de l'oxyde de zinc (ZnO), matériau semi-conduct...
AbstractPhotoluminescence (PL) properties of ZnO nanocrystals were studied by using time-resolved an...
Zinc oxide (ZnO) is a promising material for ultra-violet optoelectronics applications due to its di...
We have investigated the photoluminescence (PL) of ZnO nanowires (NWs) containing a high density (~1...
Photoluminescence (PL) spectroscopy and associated techniques are used to investigate the optical pr...
We conducted a detailed study of the yellow luminescence (YL) band that has a maximum of 2.19eV at 1...
We studied the correlation between defect species, as probed by using photoluminescence (PL), and th...
The mechanism of the commonly observed green photoluminescence (PL) emission in ZnO is still controv...
Zinc oxide (ZnO) is a wide-band-gap semiconductor suitable for many optical and optoelectronic appli...
Zinc oxide (ZnO) is a wide band-gap semiconductor material (Eg=3.37 eV) characterized by many promis...
The merger of the absorption coefficient dispersion, retrieved from transmission by the modified Urb...
The crystal structure of ZnO is wurtzite and the stacking sequence of atomic layers along the “c” ax...
We report photoluminescence (PL) studies of the surface exciton peak in ZnO nanostructures at ∼3.367...
At room temperature, multiphoton absorption- (MPA-) induced photoluminescence in ZnO strongly driven...
The chemical identification of donor bound excitons in ZnO has been studied using radioactive ions. ...
Ce travail porte sur l'étude des propriétés optiques de l'oxyde de zinc (ZnO), matériau semi-conduct...
AbstractPhotoluminescence (PL) properties of ZnO nanocrystals were studied by using time-resolved an...
Zinc oxide (ZnO) is a promising material for ultra-violet optoelectronics applications due to its di...
We have investigated the photoluminescence (PL) of ZnO nanowires (NWs) containing a high density (~1...
Photoluminescence (PL) spectroscopy and associated techniques are used to investigate the optical pr...
We conducted a detailed study of the yellow luminescence (YL) band that has a maximum of 2.19eV at 1...
We studied the correlation between defect species, as probed by using photoluminescence (PL), and th...
The mechanism of the commonly observed green photoluminescence (PL) emission in ZnO is still controv...
Zinc oxide (ZnO) is a wide-band-gap semiconductor suitable for many optical and optoelectronic appli...
Zinc oxide (ZnO) is a wide band-gap semiconductor material (Eg=3.37 eV) characterized by many promis...