Ultrafast, ultra-broad-band photoconductive detector based on heavily doped and highly compensated germanium has been demonstrated. Such a material demonstrates optical sensitivity in the more than 8 octaves, in the infrared, from about 2 mm to about 8 μm. The spectral sensitivity peaks up between 2 THz and 2.5 THz and is slowly reduced towards lower and higher frequencies. The life times of free electrons/holes measured by a pump-probe technique approach a few tenths of picoseconds and remain almost independent on the optical input intensity and on the temperature of a detector in the operation range. During operation, a detector is cooled down to liquid helium temperature but has been approved to detect, with a reduced sensitivity, up to ...
The theoretical temporal resolution limit tT of a silicon photodiode (Si PD) is 11.1 ps. We call “su...
High n-type doping in germanium is essential for many electronic and optoelectronic applications esp...
We propose a high-speed electro-absorption modulator based on a direct bandgap Ge0.875Sn0.125 alloy ...
Ultrafast, ultra-broad-band photoconductive detector based on heavily doped and highly compensated g...
A broad-band, visible to the far-infrared, fast photoconductive detector based on heavily doped and ...
The availability of intense short-pulsed THz radiation from sources such as free electron lasers (FE...
Highly compensated Ge:Ga photoconductors have been fabricated and evaluated for high bandwidth heter...
A single-color pump-probe system has been commissioned at the Novosibirsk free electron laser. The l...
Intense and short pulsed THz sources require fast, broad-band detectors with large dynamic range. Ex...
PhDThis report describes an experimental study of the conduction and absorption mechanisms of Germa...
We demonstrate silicon-based ultrafast metal-semiconductor-metal (MSM) photodetectors for near infra...
We demonstrate ultrabroadband electro-optic detection of multi-THz transients using mechanically exf...
Recent advances in semiconductor film deposition allow for the growth of heavily-doped germanium wit...
The optical saturation of nonresonant photoionization of shallow acceptors in p-Ge was investigated ...
We investigate the nonlinear optical properties of single resonant plasmonic antennas fabricated fro...
The theoretical temporal resolution limit tT of a silicon photodiode (Si PD) is 11.1 ps. We call “su...
High n-type doping in germanium is essential for many electronic and optoelectronic applications esp...
We propose a high-speed electro-absorption modulator based on a direct bandgap Ge0.875Sn0.125 alloy ...
Ultrafast, ultra-broad-band photoconductive detector based on heavily doped and highly compensated g...
A broad-band, visible to the far-infrared, fast photoconductive detector based on heavily doped and ...
The availability of intense short-pulsed THz radiation from sources such as free electron lasers (FE...
Highly compensated Ge:Ga photoconductors have been fabricated and evaluated for high bandwidth heter...
A single-color pump-probe system has been commissioned at the Novosibirsk free electron laser. The l...
Intense and short pulsed THz sources require fast, broad-band detectors with large dynamic range. Ex...
PhDThis report describes an experimental study of the conduction and absorption mechanisms of Germa...
We demonstrate silicon-based ultrafast metal-semiconductor-metal (MSM) photodetectors for near infra...
We demonstrate ultrabroadband electro-optic detection of multi-THz transients using mechanically exf...
Recent advances in semiconductor film deposition allow for the growth of heavily-doped germanium wit...
The optical saturation of nonresonant photoionization of shallow acceptors in p-Ge was investigated ...
We investigate the nonlinear optical properties of single resonant plasmonic antennas fabricated fro...
The theoretical temporal resolution limit tT of a silicon photodiode (Si PD) is 11.1 ps. We call “su...
High n-type doping in germanium is essential for many electronic and optoelectronic applications esp...
We propose a high-speed electro-absorption modulator based on a direct bandgap Ge0.875Sn0.125 alloy ...