Noncontact atomic force microscopy provides access to several complementary signals, such as topography, damping, and contact potential. The traditional presentation of such data sets in adjacent figures or in colour-coded pseudo-three-dimensional plots gives only a qualitative impression. We introduce two-dimensional histograms for the representation of multichannel NC-AFM data sets in a quantitative fashion. Presentation and analysis are exemplified for topography and contact-potential data for graphene grown epitaxially on 6H-SiC(0001), as recorded by Kelvin probe force microscopy in ultrahigh vacuum. Sample preparations by thermal decomposition in ultrahigh vacuum and in an argon atmosphere are compared and the respective growth mechani...
Le graphène, un feuillet élémentaire de graphite, est un matériau très étudié par la communauté scie...
This paper presents an investigation of the morphological and structural properties of graphene (Gr)...
The formation of graphene on the (0001) surface of SiC (the Si-face) is studied by atomic force micr...
Graphene is created through thermal decomposition of the Si face of 4H-SiC in high-vacuum. Growth te...
Graphene is created through thermal decomposition of the Si face of 4H-SiC in high-vacuum. Growth te...
Graphene is created through thermal decomposition of the Si face of 4H-SiC in high-vacuum. Growth te...
International audienceAbstract By combining non-contact atomic force microscopy (nc-AFM) and Kelvin ...
International audienceAbstract By combining non-contact atomic force microscopy (nc-AFM) and Kelvin ...
Epitaxial carbon was grown by heating (000 (1) over bar) silicon carbide (SiC) to high temperatures ...
The atomic force microscope (AFM) is used to study the morphology of graphene grown ...
A characterization of the graphitic overlayer that forms on 4H-SiC(000 (1) over bar) substrates heat...
A characterization of the graphitic overlayer that forms on 4H-SiC(000 (1) over bar) substrates heat...
The morphology of graphene formed on the ( 1000) surface (the C-face) and the (0001) surface (the Si...
The morphology of graphene formed on the (0001̅ ) surface (the C-face) and the (0001) surface (the S...
Step-free SiC was thermally decomposed in vacuum to better understand graphene formation in the abse...
Le graphène, un feuillet élémentaire de graphite, est un matériau très étudié par la communauté scie...
This paper presents an investigation of the morphological and structural properties of graphene (Gr)...
The formation of graphene on the (0001) surface of SiC (the Si-face) is studied by atomic force micr...
Graphene is created through thermal decomposition of the Si face of 4H-SiC in high-vacuum. Growth te...
Graphene is created through thermal decomposition of the Si face of 4H-SiC in high-vacuum. Growth te...
Graphene is created through thermal decomposition of the Si face of 4H-SiC in high-vacuum. Growth te...
International audienceAbstract By combining non-contact atomic force microscopy (nc-AFM) and Kelvin ...
International audienceAbstract By combining non-contact atomic force microscopy (nc-AFM) and Kelvin ...
Epitaxial carbon was grown by heating (000 (1) over bar) silicon carbide (SiC) to high temperatures ...
The atomic force microscope (AFM) is used to study the morphology of graphene grown ...
A characterization of the graphitic overlayer that forms on 4H-SiC(000 (1) over bar) substrates heat...
A characterization of the graphitic overlayer that forms on 4H-SiC(000 (1) over bar) substrates heat...
The morphology of graphene formed on the ( 1000) surface (the C-face) and the (0001) surface (the Si...
The morphology of graphene formed on the (0001̅ ) surface (the C-face) and the (0001) surface (the S...
Step-free SiC was thermally decomposed in vacuum to better understand graphene formation in the abse...
Le graphène, un feuillet élémentaire de graphite, est un matériau très étudié par la communauté scie...
This paper presents an investigation of the morphological and structural properties of graphene (Gr)...
The formation of graphene on the (0001) surface of SiC (the Si-face) is studied by atomic force micr...