Physical investigations of vanadium oxide thin films on p-Si substrate

In this study, vanadium oxide coated thin films on the p-Si substrate were prepared by the sol-gel method using V2O5 powder as a precursor. The crystal structures, surface morphology, and content of the films were investigated by XRD, SEM, AFM, and EDX analysis, respectively. Metal-oxide-semiconductor (MOS) structures were fabricated on the p-Si wafer and the electrical properties of those were obtained from current-voltage (I-V) and capacitance-voltage (C-V) measurements. As a result of XRD analysis, V8O15 and V3O7 structure peaks were observed in the films. The frequency and voltage-dependent capacitance measurements for MOS structures showed that the capacitance decreased with increasing frequency. The main electrical parameters for instance diode ideality factor (n), barrier height (phi(B)), series resistance (R-S) of the MOS structure were determined from the current-voltage (I-V) characteristics and compared in detail with thermionic emission theory, Norde and Cheung methods