Increasing resistivity of metal wires with reducing nanoscale dimensions is a major performance bottleneck of semiconductor computing technologies. We show that metals with suitably anisotropic Fermi velocity distributions can strongly suppress electron scattering by surfaces and outperform isotropic conductors such as copper in nanoscale wires. We derive a corresponding descriptor for the resistivity scaling of anisotropic conductors, screen thousands of metals using first-principles calculations of this descriptor and identify the most promising materials for nanoscale interconnects. Previously-proposed layered conductors such as MAX phases and delafossites show promise in thin films, but not in narrow wires due to increased scattering fr...
We study the resistivity scaling in nanometer-sized metallic wires due to surface roughness and grai...
The resistivity of Cu interconnects increases rapidly with continuously scaling down due to scatteri...
We present an ab initio evaluation of electron scattering mechanisms in Al interconnects from a back...
The resistivity scaling of metals is a crucial limiting factor for further downscaling of interconne...
Conductivity of nanostructures differ significantly from the bulk. One such manifestation is the res...
The resistivity of metallic thin films and nanowires increases drastically when the film thickness o...
It is well known that the conductivity of metal nanowires decreases with the wire diameter. This siz...
The resistivity of metallic thin films and nanowires increases drastically when the film thickness o...
The increasing resistance of Cu interconnects for decreasing dimensions is a major challenge in cont...
We assess the viability of topological semimetals for application in advanced interconnect technolog...
A simple quantitative model has been proposed for exploring the combined effect of size, shape, and ...
Ando’s model provides a rigorous quantum mechanical framework for electron-surface roughness scatter...
A self-consistent analytical solution of the multi-subband Boltzmann transport equation with collisi...
Density functional theory and density functional tight binding are applied to model electron transpo...
© 2020 The Authors. Published by WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim. Antiphase boundaries (A...
We study the resistivity scaling in nanometer-sized metallic wires due to surface roughness and grai...
The resistivity of Cu interconnects increases rapidly with continuously scaling down due to scatteri...
We present an ab initio evaluation of electron scattering mechanisms in Al interconnects from a back...
The resistivity scaling of metals is a crucial limiting factor for further downscaling of interconne...
Conductivity of nanostructures differ significantly from the bulk. One such manifestation is the res...
The resistivity of metallic thin films and nanowires increases drastically when the film thickness o...
It is well known that the conductivity of metal nanowires decreases with the wire diameter. This siz...
The resistivity of metallic thin films and nanowires increases drastically when the film thickness o...
The increasing resistance of Cu interconnects for decreasing dimensions is a major challenge in cont...
We assess the viability of topological semimetals for application in advanced interconnect technolog...
A simple quantitative model has been proposed for exploring the combined effect of size, shape, and ...
Ando’s model provides a rigorous quantum mechanical framework for electron-surface roughness scatter...
A self-consistent analytical solution of the multi-subband Boltzmann transport equation with collisi...
Density functional theory and density functional tight binding are applied to model electron transpo...
© 2020 The Authors. Published by WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim. Antiphase boundaries (A...
We study the resistivity scaling in nanometer-sized metallic wires due to surface roughness and grai...
The resistivity of Cu interconnects increases rapidly with continuously scaling down due to scatteri...
We present an ab initio evaluation of electron scattering mechanisms in Al interconnects from a back...