The composition dependence of the natural band alignment at the GaxIn1-xP/AlyIn1-yP alloy interface is investigated via hybrid functional based density functional theory. The direct-indirect crossover for the GaxIn1-xP and AlyIn1-yP alloys is calculated to occur for x = 0.9 and y = 0.43. The calculated GaxIn1-xP/AlyIn1-yP interface band alignment shows a crossover from type-I to type-II with increasing Ga content x. The valence band offset is essentially positive irrespective of the alloy compositions, and amounts up to 0.56 eV. The conduction band offset varies between −0.85 and 1.16 eV
International audienceWe theoretically calculate the composition dependence of the valence-and condu...
The band offsets between crystalline and hydrogenated amorphous silicon (a−Si∶H) are key parameters ...
Accurate band offset calculations are challenging for heterojunction interfaces that consist of two ...
The composition dependence of the natural band alignment at the GaxIn1-xP/AlyIn1-yP alloy interface ...
Band structures of GaAs1−xNx and GaSb1−xNx alloys are studied in the framework of the density functi...
http://link.aip.org/link/JAPIAU/v95/i10/p5597/s1We present a systematic study of the sheet carrier d...
The natural and true band profiles at heterojunctions formed by hexagonal Si$_x$Ge$_{1-x}$ alloys ar...
In van der Waals heterostructures, the relative alignment of bands between layers, and the resulting...
Conduction band edge (CBE) and valence band edge (VBE) positions of InxGa1-xN photoelectrodes were c...
[[abstract]]We conduct first-principles total-energy density functional calculations to study the ba...
We present a combined experimental and theoretical analysis of the evolution of the near-band-gap el...
The electronic structure of lattice-matched InP/Ga0.47In0.53As heterojunctions has been studied for ...
We present a first principle investigation of the electronicstructure and the band gap bowing parame...
The band gap bowing and the electron localization ofGaxIn1-xN are calculated using both the local de...
In van der Waals heterostructures, the relative alignment of bands between layers, and the resulting...
International audienceWe theoretically calculate the composition dependence of the valence-and condu...
The band offsets between crystalline and hydrogenated amorphous silicon (a−Si∶H) are key parameters ...
Accurate band offset calculations are challenging for heterojunction interfaces that consist of two ...
The composition dependence of the natural band alignment at the GaxIn1-xP/AlyIn1-yP alloy interface ...
Band structures of GaAs1−xNx and GaSb1−xNx alloys are studied in the framework of the density functi...
http://link.aip.org/link/JAPIAU/v95/i10/p5597/s1We present a systematic study of the sheet carrier d...
The natural and true band profiles at heterojunctions formed by hexagonal Si$_x$Ge$_{1-x}$ alloys ar...
In van der Waals heterostructures, the relative alignment of bands between layers, and the resulting...
Conduction band edge (CBE) and valence band edge (VBE) positions of InxGa1-xN photoelectrodes were c...
[[abstract]]We conduct first-principles total-energy density functional calculations to study the ba...
We present a combined experimental and theoretical analysis of the evolution of the near-band-gap el...
The electronic structure of lattice-matched InP/Ga0.47In0.53As heterojunctions has been studied for ...
We present a first principle investigation of the electronicstructure and the band gap bowing parame...
The band gap bowing and the electron localization ofGaxIn1-xN are calculated using both the local de...
In van der Waals heterostructures, the relative alignment of bands between layers, and the resulting...
International audienceWe theoretically calculate the composition dependence of the valence-and condu...
The band offsets between crystalline and hydrogenated amorphous silicon (a−Si∶H) are key parameters ...
Accurate band offset calculations are challenging for heterojunction interfaces that consist of two ...