A high repetition-rate laser plasma source, possessing distinct radiation and particle emission characteristics, is now a principal candidate light source for the next generation of technology for the fabrication of computer chips. For these sources to satisfy this critical need they will need to meet unprecedented levels of performance, stability and lifetime. We review here some of the principal diagnostics of the EUV radiation that are now being utilized in the metrology, spectroscopy and imaging of these sources
Compact, flexible laboratory sources offer advanced flexibility in developing components for EUV-lit...
An experimental setup that directly reproduces extreme ultraviolet (EUV) lithography relevant condit...
The authors report on the development of a high power laser plasma Extreme Ultraviolet (EUV) source ...
With the development of EUV lithography there is an increasing need for high-accuracy at-wavelength ...
Laser-produced plasmas are source candidates for EUV lithography. The radiation angular distribution...
Extreme ultraviolet lithography(EUVL) is being developed worldwide as the next generation technology...
The most pressing technical issue for the success of EUV lithography is the provision of a high repe...
This paper describes the development of laser produced plasma (LPP) technology as an EUV source for ...
The XUV band, a region of light spanning the wavelength range of 5 - 200 nm, is located between the ...
In this work we present the status of our high repetition-rate/high power EUV source facility. The m...
We have configured a new type of target for laser plasma x-ray generation. This target consists of a...
Extreme ultraviolet (EUV) light sources are required for printing and inspection of ever more shrink...
We have been developing an EUV light source by laser-produced plasma for the use of EUV lithography ...
With the availability of high reflectivity multilayer mirrors and zone plate lenses, the EUV region ...
The authors demonstrate a detection system of EUV radiation pulses. The system provides energy measu...
Compact, flexible laboratory sources offer advanced flexibility in developing components for EUV-lit...
An experimental setup that directly reproduces extreme ultraviolet (EUV) lithography relevant condit...
The authors report on the development of a high power laser plasma Extreme Ultraviolet (EUV) source ...
With the development of EUV lithography there is an increasing need for high-accuracy at-wavelength ...
Laser-produced plasmas are source candidates for EUV lithography. The radiation angular distribution...
Extreme ultraviolet lithography(EUVL) is being developed worldwide as the next generation technology...
The most pressing technical issue for the success of EUV lithography is the provision of a high repe...
This paper describes the development of laser produced plasma (LPP) technology as an EUV source for ...
The XUV band, a region of light spanning the wavelength range of 5 - 200 nm, is located between the ...
In this work we present the status of our high repetition-rate/high power EUV source facility. The m...
We have configured a new type of target for laser plasma x-ray generation. This target consists of a...
Extreme ultraviolet (EUV) light sources are required for printing and inspection of ever more shrink...
We have been developing an EUV light source by laser-produced plasma for the use of EUV lithography ...
With the availability of high reflectivity multilayer mirrors and zone plate lenses, the EUV region ...
The authors demonstrate a detection system of EUV radiation pulses. The system provides energy measu...
Compact, flexible laboratory sources offer advanced flexibility in developing components for EUV-lit...
An experimental setup that directly reproduces extreme ultraviolet (EUV) lithography relevant condit...
The authors report on the development of a high power laser plasma Extreme Ultraviolet (EUV) source ...