Performance Enhancement Of Cigss Absorber Layer On Glass Substrate

The article presents the development of radiation resistant, highly efficient, high specific power, copper indium gallium selenide sulfide, CuIn1-xGaxSe2-ySy (CIGSS) absorber thin film solar cells for terrestrial and space application. The effect of post sulfurization treatment and gallium incorporation for performance enhancement are discussed. CIGSS thin films were prepared at the FSEC photovoltaic materials lab in two steps. The first step consisted of deposition of Cu-In-Ga precursors using DC magnetron sputtering on molybdenum back contact. The second step involved selenization and sulfurization of these precursors. Selenization was carried out using diethylselenide (DESe) as a selenium source and H2S as sulfur source. Characterization techniques such as scanning electron microscopy (SEM), X-ray diffraction (XRD) and Auger electron spectroscopy (AES) has confirmed the formation of chalcopyrite CuIn0.96Ga0.04Se0.7S1.3 phase with random grain size