Electrical Studies On Amorphous Silicon Carbide Nitride Films

Electrical studies on amorphous silicon carbide nitride films were presented. Thin films of silicon carbonitride were deposited through a radio frequency magnetron sputtering process using silicon carbide as target. Electrical resistivity and dielectric constants of the films were also measured as a function of N2Ar ratios. It was possible to change the N2/Ar ratios to yield various compositions of SiCxNy films during sputtering by varying the nitrogen content in the gas flow mixture