Add to ORKGSubstrate current is a good indicator for the hot-carrier and electrostatic discharge related reliability of MOSFET. This paper develops an improved and analytic model for such a current based on the length of and maximum electric field in the high-field region near the drain junction. The present model is compared against several existing substrate current models reported in the literature, and results from device simulation and measurements are also included in support of the model development. © 2002 Elsevier Science Ltd. All rights reserved
The Gate-oxide thickness effects on hot-carrier-induced degradation have been investigated for submi...
The model describes correctly the drain current and the small signal parameters in all regions of op...
A circuit simulation model is presented suitable for the design of analogue and digital SOS MOSFET i...
Substrate current is a good indicator for the hot-carrier and electrostatic discharge related reliab...
Substrate current is a good indicator for the hot-carrier and electrostatic discharge related reliab...
An improved substrate current model for deep submicron MOSFETs, suitable for circuit aging simulatio...
An improved substrate current model for deep submicron MOSFETs, suitable for circuit aging simulatio...
An improved substrate current model, incorporating the drain and gate bias dependent velocity satura...
In the present communication we have tried to study the substrate current behavior in the sub-micro...
A compact and accurate model for the substrate resistance is essential and critical for the characte...
A compact and accurate model for the substrate resistance is essential and critical for the characte...
In our study, we characterize the temperature and stress dependence of the substrate current, and wi...
731-737An analytic model for saturation drain current and substrate current of fully overlapped lig...
This paper presents a new and more accurate potential based model for bulk MOSFET compared to the tr...
We present a phenomenological model for subsurface leakage current in MOSFETs biased in accumulation...
The Gate-oxide thickness effects on hot-carrier-induced degradation have been investigated for submi...
The model describes correctly the drain current and the small signal parameters in all regions of op...
A circuit simulation model is presented suitable for the design of analogue and digital SOS MOSFET i...
Substrate current is a good indicator for the hot-carrier and electrostatic discharge related reliab...
Substrate current is a good indicator for the hot-carrier and electrostatic discharge related reliab...
An improved substrate current model for deep submicron MOSFETs, suitable for circuit aging simulatio...
An improved substrate current model for deep submicron MOSFETs, suitable for circuit aging simulatio...
An improved substrate current model, incorporating the drain and gate bias dependent velocity satura...
In the present communication we have tried to study the substrate current behavior in the sub-micro...
A compact and accurate model for the substrate resistance is essential and critical for the characte...
A compact and accurate model for the substrate resistance is essential and critical for the characte...
In our study, we characterize the temperature and stress dependence of the substrate current, and wi...
731-737An analytic model for saturation drain current and substrate current of fully overlapped lig...
This paper presents a new and more accurate potential based model for bulk MOSFET compared to the tr...
We present a phenomenological model for subsurface leakage current in MOSFETs biased in accumulation...
The Gate-oxide thickness effects on hot-carrier-induced degradation have been investigated for submi...
The model describes correctly the drain current and the small signal parameters in all regions of op...
A circuit simulation model is presented suitable for the design of analogue and digital SOS MOSFET i...