Add to ORKGA broad area InGaAs semiconductor laser diode with two monolithically integrated optical elements, a 275nm period diffraction grating and multi-level refractive lens, is presented. We discuss the potential of dual optics integration for beam shaping of high power lasers and amplifiers. © 2000 Optical Society of America
AbstractAs a compact multi-functional device, monolithic integrated multi-section semiconductor lase...
Semiconductor optical amplifiers (SOAs) offer direct electrical injection, power consumption, integr...
Stable dual-wavelength operation of InGaAs diode lasers coupled with volume Bragg gratings has been ...
A broad-area semiconductor laser diode with two monolithically integrated optical elements is presen...
A broad-area semiconductor laser diode with two monolithically integrated optical elements is presen...
This dissertation investigates the monolithic integration of dual optical elements on high power sem...
Monolithic integration of 1.55-mu m ring lasers with distributed Bragg reflectors (DBRs) and distrib...
This thesis deals with the fabrication and characterization of grating-based integration-compatible ...
We report on the design and experimental results of monolithically integrated optoelec-tronic device...
By broadening the stripe width of the active waveguide region, it is possible to extract high optica...
159 p.Thesis (Ph.D.)--University of Illinois at Urbana-Champaign, 2000.The next technical challenge ...
Wide stripe semiconductor lasers have a wide variety of applications in remote sensing, in materials...
Integration of active optical components typically serves five goals: enhanced performance, smaller ...
We present a highly efficient laterally-coupled 1.55 μm DFB laser monolithically integrated with mul...
The optical properties of GaAs make it a very useful material for the fabrication of optical emitter...
AbstractAs a compact multi-functional device, monolithic integrated multi-section semiconductor lase...
Semiconductor optical amplifiers (SOAs) offer direct electrical injection, power consumption, integr...
Stable dual-wavelength operation of InGaAs diode lasers coupled with volume Bragg gratings has been ...
A broad-area semiconductor laser diode with two monolithically integrated optical elements is presen...
A broad-area semiconductor laser diode with two monolithically integrated optical elements is presen...
This dissertation investigates the monolithic integration of dual optical elements on high power sem...
Monolithic integration of 1.55-mu m ring lasers with distributed Bragg reflectors (DBRs) and distrib...
This thesis deals with the fabrication and characterization of grating-based integration-compatible ...
We report on the design and experimental results of monolithically integrated optoelec-tronic device...
By broadening the stripe width of the active waveguide region, it is possible to extract high optica...
159 p.Thesis (Ph.D.)--University of Illinois at Urbana-Champaign, 2000.The next technical challenge ...
Wide stripe semiconductor lasers have a wide variety of applications in remote sensing, in materials...
Integration of active optical components typically serves five goals: enhanced performance, smaller ...
We present a highly efficient laterally-coupled 1.55 μm DFB laser monolithically integrated with mul...
The optical properties of GaAs make it a very useful material for the fabrication of optical emitter...
AbstractAs a compact multi-functional device, monolithic integrated multi-section semiconductor lase...
Semiconductor optical amplifiers (SOAs) offer direct electrical injection, power consumption, integr...
Stable dual-wavelength operation of InGaAs diode lasers coupled with volume Bragg gratings has been ...