Catastrophic optical damage on the emitting surface of a Fabry-Perot semiconductor laser is one of the key limitations in the generationof high output power from these devices. One method to avoid the catastrophic failure is to enlarge the emission area. Owing to a large emission area, the Grating Coupled Surface Emitting laser (GCSEL) has the potential to generate higher output power as compared to conventional edge emitting semiconductor lasers, by avoiding catastrophic facet damage. This paper demonstrates an external cavity, active mode-locked GCSEL and amplification characteristics of GCSOA using a c.w. external cavity GCSEL
Ever since the first laser demonstration in 1960, applications for laser systems have increased to i...
Active stabilisation showed a relative locked linewidth of approx 3 kHz. Coarse tuning over 7 nm was...
This paper presents experimental results of using an inverse bow-tie gain guided semiconductor optic...
We demonstrate an external cavity, active mode-locked GCSEL. The optical pulse duration from the act...
An external-cavity, actively mode-locked grating-coupled surface-emitting semiconductor laser (GCSEL...
An external-cavity, actively mode-locked grating-coupled surface-emitting semiconductor laser (GCSEL...
An external cavity, actively mode-locked grating coupled surface emitting semiconductor laser (GCSEL...
Three unique laser properties that are difficult to obtain from other known diode laser structures w...
Three unique laser properties that are difficult to obtain from other known diode laser structures w...
Three unique laser properties that are difficult to obtain from other known diode laser structures w...
In this dissertation, a novel semiconductor mode-locked oscillator which is an extension of eXtreme ...
In this dissertation, a novel semiconductor mode-locked oscillator which is an extension of eXtreme ...
The gain-switched, single frequency operation of an external cavity grating-coupled surface emitting...
The gain-switched, single frequency operation of an external cavity grating-coupled surface emitting...
Vertical external cavity semiconductor lasers have emerged as an interesting technology based on cur...
Ever since the first laser demonstration in 1960, applications for laser systems have increased to i...
Active stabilisation showed a relative locked linewidth of approx 3 kHz. Coarse tuning over 7 nm was...
This paper presents experimental results of using an inverse bow-tie gain guided semiconductor optic...
We demonstrate an external cavity, active mode-locked GCSEL. The optical pulse duration from the act...
An external-cavity, actively mode-locked grating-coupled surface-emitting semiconductor laser (GCSEL...
An external-cavity, actively mode-locked grating-coupled surface-emitting semiconductor laser (GCSEL...
An external cavity, actively mode-locked grating coupled surface emitting semiconductor laser (GCSEL...
Three unique laser properties that are difficult to obtain from other known diode laser structures w...
Three unique laser properties that are difficult to obtain from other known diode laser structures w...
Three unique laser properties that are difficult to obtain from other known diode laser structures w...
In this dissertation, a novel semiconductor mode-locked oscillator which is an extension of eXtreme ...
In this dissertation, a novel semiconductor mode-locked oscillator which is an extension of eXtreme ...
The gain-switched, single frequency operation of an external cavity grating-coupled surface emitting...
The gain-switched, single frequency operation of an external cavity grating-coupled surface emitting...
Vertical external cavity semiconductor lasers have emerged as an interesting technology based on cur...
Ever since the first laser demonstration in 1960, applications for laser systems have increased to i...
Active stabilisation showed a relative locked linewidth of approx 3 kHz. Coarse tuning over 7 nm was...
This paper presents experimental results of using an inverse bow-tie gain guided semiconductor optic...