This article reports an electromigration-lifetime model that incorporates the effect of Joule heating under pulsed DC condition. This median-time-to-failure model accounts for applied current density, duty factor, frequency, thermal time constant, and interconnect geometry. The model predictions reported in this work agree very well with numerical simulation and experimental data over a wide range of current densities and frequencies. © 2001 Elsevier Science Ltd. All rights reserved
The electromigration behaviour of Cu/SiCOH interconnects carrying unipolar pulsed current with long ...
The time to void nucleation and the time for void growth to failure were determined using a program ...
The time to void nucleation and the time for void growth to failure were determined using a program ...
This article reports an electromigration-lifetime model that incorporates the effect of Joule heatin...
Electromigration behavior under pulsed directional current (PDC) was investigated theoretically and ...
Although most interconnects carry pulsed current signals during field operations, most of our unders...
Abstract—Thermal effects are becoming a limiting factor in high-performance circuit design due to th...
Electromigration lifetime considering the barrier layer effect under the DC and pulsed DC stress is ...
Electromigration lifetime considering the barrier layer effect under the DC and pulsed DC stress is ...
Electromigration lifetime considering the barrier layer effect under the DC and pulsed DC stress is ...
Failure mechanisms observed in electromigration (EM) stressed dual damascene Cu/SiO₂ interconnects t...
Thesis (M.S.) University of Alaska Fairbanks, 2004Radio Frequency (RF) Micro-Electro-Mechanical Syst...
Power electronic advancement trends indicate that device power density will continue to increase as ...
Electromigration is the mass transport of atoms in a material due to elevated temperatures and an ap...
The electromigration behaviour of Cu/SiCOH interconnects carrying unipolar pulsed current with long ...
The electromigration behaviour of Cu/SiCOH interconnects carrying unipolar pulsed current with long ...
The time to void nucleation and the time for void growth to failure were determined using a program ...
The time to void nucleation and the time for void growth to failure were determined using a program ...
This article reports an electromigration-lifetime model that incorporates the effect of Joule heatin...
Electromigration behavior under pulsed directional current (PDC) was investigated theoretically and ...
Although most interconnects carry pulsed current signals during field operations, most of our unders...
Abstract—Thermal effects are becoming a limiting factor in high-performance circuit design due to th...
Electromigration lifetime considering the barrier layer effect under the DC and pulsed DC stress is ...
Electromigration lifetime considering the barrier layer effect under the DC and pulsed DC stress is ...
Electromigration lifetime considering the barrier layer effect under the DC and pulsed DC stress is ...
Failure mechanisms observed in electromigration (EM) stressed dual damascene Cu/SiO₂ interconnects t...
Thesis (M.S.) University of Alaska Fairbanks, 2004Radio Frequency (RF) Micro-Electro-Mechanical Syst...
Power electronic advancement trends indicate that device power density will continue to increase as ...
Electromigration is the mass transport of atoms in a material due to elevated temperatures and an ap...
The electromigration behaviour of Cu/SiCOH interconnects carrying unipolar pulsed current with long ...
The electromigration behaviour of Cu/SiCOH interconnects carrying unipolar pulsed current with long ...
The time to void nucleation and the time for void growth to failure were determined using a program ...
The time to void nucleation and the time for void growth to failure were determined using a program ...