Laser Direct Write Of Conducting And Insulating Tracks In Silicon Carbide

Conventional direct write processes are multi-step requiring at least one additional process to change conductive properties. A direct conversion technique that uses lasers to irradiate silicon carbide, providing tracks which are highly conductive has been demonstrated. It was found that laser irradiation of insulating silicon carbide films could cause a drop from 1011 to 10-4 ohm-cm in a 4-point resistance test. However, in the presence of pure oxygen, laser-irradiated silicon carbide conductor and semiconductor samples exhibit insulating characteristics. Pattern formation was achieved by a computer program controlled galvo-mirror. The pads, 0.4 cm × 0.7 cm were formed by beam rastering with an overlap of 30% of the 0.025 cm beam diameter. This computer assisted processing allows the design of patterns using conventional CAD/CAE technologies and smart material behavior via selective and controlled electrical property transitions by laser irradiation