Ge-On-Si Approaches To The Detection Of Near-Infrared Light

We review our recent results on Ge-based near-infrared photodetectors grown on silicon. We fabricated metal-semiconductor-metal photodetectors based on epitaxial pure-Ge grown on silicon by Chemical Vapor Deposition. Material characterization and device performances are illustrated and discussed. Exploiting a novel approach based on evaporation of polycrystalline-Ge on silicon, we also realized efficient near-infrared photodiodes with good speed and sensitivity. Finally, multiple-element devices were designed, fabricated, and tested, such as a voltage-tunable wavelength-selective photodetector based on a SiGe superlattice and a linear array of 16 photodetectors in poly-Ge on Si