Add to ORKGA new silicon-on-insulator (SOI) device structure is proposed. The new design provides a heat conducting path between the channel and substrate. The device has been verified in two-dimensional device simulation. This new structure reduces device self-heating and increases the drain of the SOI MOSFET. © 1999 Taylor and Francis Group, LLC
An analytical model is developed to estimate the effect of the scaling of the buried oxide on the he...
Silicon-on-insulator (SOI) technology presents one way of fabricating semiconductor devices on an in...
Substrate engineering innovations such as SOI and the use of Si/SiGe virtual substrates become neces...
A new silicon-on-insulator (SOI) device structure is proposed. The new design provides a heat conduc...
A new silicon-on-insulator (SOI) device structure is proposed. The new design provides a heat conduc...
A new silicon-on-insulator (SOI) device structure is proposed. The new design provides a heat conduc...
As the need for VLSI circuits with high speed and low power increases the necessity for technologies...
In this paper two kinds of novel localized-SOI structure devices, named as Quasi-SOI MOSFET and sour...
In this paper, a novel structure named as quasi-SOI MOSFET is proposed, which can combine the advant...
In this paper two kinds of novel localized-SOI structure devices, named as Quasi-SOI MOSFET and sour...
For the first time,,a novel device concept of a quasi-silicon-on-insulator (SOI) MOSFET is proposed ...
This paper discusses self-heating (SHE) effects in silicon-on-insulator (SOI) CMOS technology and ap...
Silicon-on-Insulator(SOI) technology compare with bulk circuit,an obvious improvement in power consu...
This paper discusses self-heating (SHE) effects in silicon-on-insulator (SOI) CMOS technology and ap...
Self-heating effect is an important issue for SOI CMOS. This is because there is a buried oxide laye...
An analytical model is developed to estimate the effect of the scaling of the buried oxide on the he...
Silicon-on-insulator (SOI) technology presents one way of fabricating semiconductor devices on an in...
Substrate engineering innovations such as SOI and the use of Si/SiGe virtual substrates become neces...
A new silicon-on-insulator (SOI) device structure is proposed. The new design provides a heat conduc...
A new silicon-on-insulator (SOI) device structure is proposed. The new design provides a heat conduc...
A new silicon-on-insulator (SOI) device structure is proposed. The new design provides a heat conduc...
As the need for VLSI circuits with high speed and low power increases the necessity for technologies...
In this paper two kinds of novel localized-SOI structure devices, named as Quasi-SOI MOSFET and sour...
In this paper, a novel structure named as quasi-SOI MOSFET is proposed, which can combine the advant...
In this paper two kinds of novel localized-SOI structure devices, named as Quasi-SOI MOSFET and sour...
For the first time,,a novel device concept of a quasi-silicon-on-insulator (SOI) MOSFET is proposed ...
This paper discusses self-heating (SHE) effects in silicon-on-insulator (SOI) CMOS technology and ap...
Silicon-on-Insulator(SOI) technology compare with bulk circuit,an obvious improvement in power consu...
This paper discusses self-heating (SHE) effects in silicon-on-insulator (SOI) CMOS technology and ap...
Self-heating effect is an important issue for SOI CMOS. This is because there is a buried oxide laye...
An analytical model is developed to estimate the effect of the scaling of the buried oxide on the he...
Silicon-on-insulator (SOI) technology presents one way of fabricating semiconductor devices on an in...
Substrate engineering innovations such as SOI and the use of Si/SiGe virtual substrates become neces...