A new approach for SPICE simulation of AlGaAs/GaAs HBT subjected to burn-in test

A new approach for extracting the parameters of the Al-GaAs/GaAs heterojunction bipolar transistor (HBT) subjected to the electrical/thermal stress test (i.e., burn-in test) is presented. Such an approach is implemented into SPICE, thus allowing the simulations of the performance of post-burn-in HBT circuits. Steady-state, frequency, and transient responses of an HBT differential amplifier are simulated using the present HBT SPICE model. Results simulated from a two-dimensional (2-D) device simulator are also included in support of the model. © 1998 IEEE