A new method for extracting the effective channel length of MOSFETs

A new and simple method to extract the effective channel length L eff of metal-oxide superconductor field effect transistor (MOSFET)s is presented. The method, which is developed based on an auxiliary integral function, has the advantage of determining the value of L eff not influenced by the series resistances of the MOSFET. The method is tested in the environments of device simulation and measurements. In addition, comparison is made between the results obtained from the present method and a widely used L eff extraction method. © 1998 Elsevier Science Ltd. All rights reserved