Add to ORKGA new method is presented to extract the threshold voltage of MOSFET\u27s. It is developed based on an integral function which is insensitive to the drain and source series resistances of the MOSFET\u27s. The method is tested in the environments of circuit simulator (SPICE), device simulation (MEDICI), and measurements. © 1997 IEEE
The threshold voltage of MOSFETs has traditionally been defined as the gate voltage required to caus...
A new method for the extraction of the MOSFET parameters is presented in this letter. The method, wh...
A new procedure is presented to separate and extract source-and-drain series resistance and mobility...
A new method is presented to extract the threshold voltage of MOSFET\u27s, It is developed based on ...
The threshold voltage is a key parameter in the silicon MOSFET design and operation. This paper give...
A new alternative technique is proposed to extract the threshold voltage from the subthreshold-to-st...
A new alternative technique is proposed to extract the threshold voltage from the subthreshold-to-st...
This article presents an up-to-date review of the several extraction methods commonly used to determ...
This article presents an up-to-date review of the several extraction methods commonly used to determ...
The threshold voltage value, which is the most important electrical parameter in modeling MOSFETs, c...
The threshold voltage Value, which is the most important electrical parameter in modeling MOSFETs, c...
Traditionally, the threshold voltage V-T of MOSFETs is modeled using the definition that the strong ...
A novel normalized mutual integral difference (NMID) method is presented in this letter to extract t...
Normalized mutual integral difference operator, a novel experimental method for extracting the thres...
Traditionally, the threshold voltage VT of MOSFETs is modeled using the definition that the strong i...
The threshold voltage of MOSFETs has traditionally been defined as the gate voltage required to caus...
A new method for the extraction of the MOSFET parameters is presented in this letter. The method, wh...
A new procedure is presented to separate and extract source-and-drain series resistance and mobility...
A new method is presented to extract the threshold voltage of MOSFET\u27s, It is developed based on ...
The threshold voltage is a key parameter in the silicon MOSFET design and operation. This paper give...
A new alternative technique is proposed to extract the threshold voltage from the subthreshold-to-st...
A new alternative technique is proposed to extract the threshold voltage from the subthreshold-to-st...
This article presents an up-to-date review of the several extraction methods commonly used to determ...
This article presents an up-to-date review of the several extraction methods commonly used to determ...
The threshold voltage value, which is the most important electrical parameter in modeling MOSFETs, c...
The threshold voltage Value, which is the most important electrical parameter in modeling MOSFETs, c...
Traditionally, the threshold voltage V-T of MOSFETs is modeled using the definition that the strong ...
A novel normalized mutual integral difference (NMID) method is presented in this letter to extract t...
Normalized mutual integral difference operator, a novel experimental method for extracting the thres...
Traditionally, the threshold voltage VT of MOSFETs is modeled using the definition that the strong i...
The threshold voltage of MOSFETs has traditionally been defined as the gate voltage required to caus...
A new method for the extraction of the MOSFET parameters is presented in this letter. The method, wh...
A new procedure is presented to separate and extract source-and-drain series resistance and mobility...