Add to ORKGThe validity of the capacitance-based method for extracting the effective channel length of MOSFETs is investigated using results from a two-dimensional device simulator. It is found that the effective channel length obtained from the capacitance-based method is much smaller than those obtained from the current-voltage methods and that discrepancy results from inconsistencies imbedded in the development of the C-V method
A novel and simple method for the extraction of the effective channel width and its dependence on th...
International audienceConstant downscaling of transistors leads to increase the relative difference ...
A new technique unique to SOI MOSFETs is presented for extracting the physical device dimensions (ef...
The validity of the capacitance-based method for extracting the effective channel length of MOSFETs ...
The capacitance-based method (C-V method) is a straightforward method for extracting the effective c...
Device simulations are, carried out to study the physical mechanisms underlying the effective channe...
A new and simple method to extract the effective channel length L eff of metal-oxide superconductor ...
International audienceThe length of MOSFET channels is an important circuit design parameter, and th...
ABSTRACT: The conventional method used to determine A L, the processing induced channel length short...
This paper proposes a method of extracting the effective channel length L-eff of nano-scale n-MOSFET...
Device simulations with MEDICI are carried out to examine the validity of the widely used methods fo...
The first part of this article presents the modeling of the long-channel bulk MOSFET as a particular...
DoctorThis thesis proposes a method of extracting the effective channel length Leff for nano-scale M...
This work involves the detailed study and understanding of physical limits and shortcoming of existi...
A novel method is presented to determine the bias-dependent series resistances and intrinsic conduct...
A novel and simple method for the extraction of the effective channel width and its dependence on th...
International audienceConstant downscaling of transistors leads to increase the relative difference ...
A new technique unique to SOI MOSFETs is presented for extracting the physical device dimensions (ef...
The validity of the capacitance-based method for extracting the effective channel length of MOSFETs ...
The capacitance-based method (C-V method) is a straightforward method for extracting the effective c...
Device simulations are, carried out to study the physical mechanisms underlying the effective channe...
A new and simple method to extract the effective channel length L eff of metal-oxide superconductor ...
International audienceThe length of MOSFET channels is an important circuit design parameter, and th...
ABSTRACT: The conventional method used to determine A L, the processing induced channel length short...
This paper proposes a method of extracting the effective channel length L-eff of nano-scale n-MOSFET...
Device simulations with MEDICI are carried out to examine the validity of the widely used methods fo...
The first part of this article presents the modeling of the long-channel bulk MOSFET as a particular...
DoctorThis thesis proposes a method of extracting the effective channel length Leff for nano-scale M...
This work involves the detailed study and understanding of physical limits and shortcoming of existi...
A novel method is presented to determine the bias-dependent series resistances and intrinsic conduct...
A novel and simple method for the extraction of the effective channel width and its dependence on th...
International audienceConstant downscaling of transistors leads to increase the relative difference ...
A new technique unique to SOI MOSFETs is presented for extracting the physical device dimensions (ef...