Add to ORKGThe analytical equations of heterojunction bipolar transistors with nonuniform doping in the base and emitter was developed. Device characteristics between linearly and uniformly doped HBTs was evaluated. The linearly doped HBT has higher current gain, lower base transit time, higher cutoff frequency, and lower emitter-base junction capacitance than those of the uniformly doped HBT. © 1997 Elsevier Science Ltd
The base current density J(B) is an important parameter in determining the common-emitter current ga...
160 p.Thesis (Ph.D.)--University of Illinois at Urbana-Champaign, 1993.Heterojunction bipolar transi...
Zinc-doped GaInP/GaAs heterojunction bipolar transistors (HBTs) grown by MOCVD were fabricated. Char...
The analytical equations of heterojunction bipolar transistors with nonuniform doping in the base an...
Described in this thesis is an investigation of design issues concerning the heterostructure bipolar...
A detailed study on Inp-InGaAs Heterojunction Bipolar Transistor is presented in this paper. Two imp...
Carbon-doped GaInP/GaAs heterojunction bipolar transistors (HBT's) and heterostructure-emitter bipol...
The effects of grading on the performance of heterojunction bipolar transistors (HBTs) are studied b...
The intrinsic HBT configurations (e.g. doping concentrations and layer thicknesses) are optimized fo...
The intrinsic HBT configurations (e.g. doping concentrations and layer thicknesses) are optimized fo...
npn het-erojunction bipolar transistors (HBT’s) which require no base contact for transistor operati...
In order to improve thermal stability and extend their safe operation region, epitaxial emitter ball...
An analytical model is developed for the common-emitter DC current gain of heterojunction bipolar tr...
This paper treats analytically the common-emitter d.c. current gain of heterojunction bipolar transi...
A one-dimensional analytical model in the Ebers-Moll formulation of a graded base double heterojunc...
The base current density J(B) is an important parameter in determining the common-emitter current ga...
160 p.Thesis (Ph.D.)--University of Illinois at Urbana-Champaign, 1993.Heterojunction bipolar transi...
Zinc-doped GaInP/GaAs heterojunction bipolar transistors (HBTs) grown by MOCVD were fabricated. Char...
The analytical equations of heterojunction bipolar transistors with nonuniform doping in the base an...
Described in this thesis is an investigation of design issues concerning the heterostructure bipolar...
A detailed study on Inp-InGaAs Heterojunction Bipolar Transistor is presented in this paper. Two imp...
Carbon-doped GaInP/GaAs heterojunction bipolar transistors (HBT's) and heterostructure-emitter bipol...
The effects of grading on the performance of heterojunction bipolar transistors (HBTs) are studied b...
The intrinsic HBT configurations (e.g. doping concentrations and layer thicknesses) are optimized fo...
The intrinsic HBT configurations (e.g. doping concentrations and layer thicknesses) are optimized fo...
npn het-erojunction bipolar transistors (HBT’s) which require no base contact for transistor operati...
In order to improve thermal stability and extend their safe operation region, epitaxial emitter ball...
An analytical model is developed for the common-emitter DC current gain of heterojunction bipolar tr...
This paper treats analytically the common-emitter d.c. current gain of heterojunction bipolar transi...
A one-dimensional analytical model in the Ebers-Moll formulation of a graded base double heterojunc...
The base current density J(B) is an important parameter in determining the common-emitter current ga...
160 p.Thesis (Ph.D.)--University of Illinois at Urbana-Champaign, 1993.Heterojunction bipolar transi...
Zinc-doped GaInP/GaAs heterojunction bipolar transistors (HBTs) grown by MOCVD were fabricated. Char...