Add to ORKGThis paper develops a comprehensive and two-dimensional model for the AlGaAs/GaAs heterojunction bipolar transistor (HBT). The model takes into account the electrical-thermal interacting mechanism in both the width and length directions of the HBT emitter finger and thus is capable of describing the two-dimensional temperature and current distributions in the emitter finger of the HBT. Results produced from a three-dimensional device simulator are also included in support of the model. Copyright © 1996 Elsevier Science Ltd
A numerical analysis is presented to investigate different base and collector structures on the d.c....
A numerical analysis is presented to investigate different base and collector structures on the d.c....
The temperature dependence of the current gain is investigated for GaAs-based heterostructure-emitte...
This paper develops a comprehensive and two-dimensional model for the AlGaAs/GaAs heterojunction bip...
Two-dimensional temperature distribution on the emitter fingers of multi-finger AlGaAs/GaAs heteroju...
A semi-numerical model for the multiple-emitter finger heterojunction bipolar transistor (HBT) is pr...
A semi-numerical model for the multiple-emitter finger heterojunction bipolar transistor (HBT) is pr...
A semi-numerical model for the multiple-emitter finger heterojunction bipolar transistor (HBT) is pr...
An analytical model which can be used to predict the thermal as well as electronic behaviour of the ...
One of the major influences on the NDR(negative differential output resistance) effect of AlGaAs/GaA...
The GaAs heterojunction bipolar transistor (HBT) is a relatively new device that has proven to opera...
A theoretical study on the heterojunction bipolar transistor (HBT) avalanche characteristics is pres...
A theoretical study on the heterojunction bipolar transistor (HBT) avalanche characteristics is pres...
This paper presents a two-dimensional numerical analysis to investigate the effects of the graded la...
A numerical analysis is presented to investigate different base and collector structures on the d.c....
A numerical analysis is presented to investigate different base and collector structures on the d.c....
The temperature dependence of the current gain is investigated for GaAs-based heterostructure-emitte...
This paper develops a comprehensive and two-dimensional model for the AlGaAs/GaAs heterojunction bip...
Two-dimensional temperature distribution on the emitter fingers of multi-finger AlGaAs/GaAs heteroju...
A semi-numerical model for the multiple-emitter finger heterojunction bipolar transistor (HBT) is pr...
A semi-numerical model for the multiple-emitter finger heterojunction bipolar transistor (HBT) is pr...
A semi-numerical model for the multiple-emitter finger heterojunction bipolar transistor (HBT) is pr...
An analytical model which can be used to predict the thermal as well as electronic behaviour of the ...
One of the major influences on the NDR(negative differential output resistance) effect of AlGaAs/GaA...
The GaAs heterojunction bipolar transistor (HBT) is a relatively new device that has proven to opera...
A theoretical study on the heterojunction bipolar transistor (HBT) avalanche characteristics is pres...
A theoretical study on the heterojunction bipolar transistor (HBT) avalanche characteristics is pres...
This paper presents a two-dimensional numerical analysis to investigate the effects of the graded la...
A numerical analysis is presented to investigate different base and collector structures on the d.c....
A numerical analysis is presented to investigate different base and collector structures on the d.c....
The temperature dependence of the current gain is investigated for GaAs-based heterostructure-emitte...