Add to ORKGDevice simulations with MEDICI are carried out to examine the validity of the widely used methods for extracting the effective channel length in LDD MOSFETs. Our results show that Terada\u27s method fails in LDD MOSFETs when the doping levels are comparable at both sides of each drain-body and source-body junction. Similar failure is also observed in conventional MOSFETs (without LDD) under analogous doping concentration conditions
As MOSFET dimensions continue to shrink, the promise of further optimizing device performance and th...
This work involves the detailed study and understanding of physical limits and shortcoming of existi...
The capacitance-based method (C-V method) is a straightforward method for extracting the effective c...
Device simulations are, carried out to study the physical mechanisms underlying the effective channe...
ABSTRACT: The conventional method used to determine A L, the processing induced channel length short...
Abstract-A new method for determining the intrinsic drain-and-source series resistance and the effec...
A novel method is presented to determine the bias-dependent series resistances and intrinsic conduct...
DoctorThis thesis proposes a method of extracting the effective channel length Leff for nano-scale M...
A simple, empirically-based method is developed for extraction of submicron surface-channel MOSFET’s...
The validity of the capacitance-based method for extracting the effective channel length of MOSFETs ...
The practical applications and limitations of four methods for extracting the effective channel leng...
This paper proposes a method of extracting the effective channel length L-eff of nano-scale n-MOSFET...
In this paper, an improved method for determining the gate-bias dependent source and drain series re...
In this thesis, a semi-empirical IDS - VDS model for sub-micron Lightly-Doped Drain (LDD) MOSFETs is...
A new and simple method to extract the effective channel length L-eff of metal-oxide superconductor ...
As MOSFET dimensions continue to shrink, the promise of further optimizing device performance and th...
This work involves the detailed study and understanding of physical limits and shortcoming of existi...
The capacitance-based method (C-V method) is a straightforward method for extracting the effective c...
Device simulations are, carried out to study the physical mechanisms underlying the effective channe...
ABSTRACT: The conventional method used to determine A L, the processing induced channel length short...
Abstract-A new method for determining the intrinsic drain-and-source series resistance and the effec...
A novel method is presented to determine the bias-dependent series resistances and intrinsic conduct...
DoctorThis thesis proposes a method of extracting the effective channel length Leff for nano-scale M...
A simple, empirically-based method is developed for extraction of submicron surface-channel MOSFET’s...
The validity of the capacitance-based method for extracting the effective channel length of MOSFETs ...
The practical applications and limitations of four methods for extracting the effective channel leng...
This paper proposes a method of extracting the effective channel length L-eff of nano-scale n-MOSFET...
In this paper, an improved method for determining the gate-bias dependent source and drain series re...
In this thesis, a semi-empirical IDS - VDS model for sub-micron Lightly-Doped Drain (LDD) MOSFETs is...
A new and simple method to extract the effective channel length L-eff of metal-oxide superconductor ...
As MOSFET dimensions continue to shrink, the promise of further optimizing device performance and th...
This work involves the detailed study and understanding of physical limits and shortcoming of existi...
The capacitance-based method (C-V method) is a straightforward method for extracting the effective c...