Add to ORKGA model for the reverse short-channel effects, based on a nonuniform lateral distribution of channel dopant, is verified with two-dimensional simulation results. The simulated results, in agreements with experimental measurements, reveal that the magnitude of the threshold voltage versus the mask channel length present a maximum value
[[abstract]]In this paper, we present an analytical short-channel threshold voltage model without an...
It is shown both experimentally and via MINIMOS simulation that the subthreshold swing S = ∂VG ∂log1...
In this paper, the influence of the source/drain (S/D) architecture on the short channel effect (SCE...
A model for reverse short-channel effects of the threshold voltage is presented by adding two separa...
As MOSFET dimensions continue to shrink, the promise of further optimizing device performance and th...
Abstract — The normal and reverse short-channel effect of LDD MOSFET’s with lateral channel-engineer...
The threshold voltage of an MOS field-effect transistor is modulated by the source-to-substrate reve...
The effect of scaling down the channel width on the threshold voltage of deep submicron MOSFETs with...
International audienceIn this paper, the boundary conditions at the edges of the junctions are discu...
In this dissertation, an above-threshold I-V model framework is constructed for short-channel double...
The Jain and Balk analytic model for two-dimensional effects in short channel MOSFETS is investigate...
A simple but reasonably accurate model is presented for the saturation voltage and current of submic...
[[abstract]]This article presents an analytical short-channel effect model for nanoscale MOSFETs. Wi...
Thesis (M.S.)--Massachusetts Institute of Technology, Dept. of Electrical Engineering and Computer S...
Rapid advancement of the Metal-Oxide-Semiconductor (MOS) transistor in the last two decades has seen...
[[abstract]]In this paper, we present an analytical short-channel threshold voltage model without an...
It is shown both experimentally and via MINIMOS simulation that the subthreshold swing S = ∂VG ∂log1...
In this paper, the influence of the source/drain (S/D) architecture on the short channel effect (SCE...
A model for reverse short-channel effects of the threshold voltage is presented by adding two separa...
As MOSFET dimensions continue to shrink, the promise of further optimizing device performance and th...
Abstract — The normal and reverse short-channel effect of LDD MOSFET’s with lateral channel-engineer...
The threshold voltage of an MOS field-effect transistor is modulated by the source-to-substrate reve...
The effect of scaling down the channel width on the threshold voltage of deep submicron MOSFETs with...
International audienceIn this paper, the boundary conditions at the edges of the junctions are discu...
In this dissertation, an above-threshold I-V model framework is constructed for short-channel double...
The Jain and Balk analytic model for two-dimensional effects in short channel MOSFETS is investigate...
A simple but reasonably accurate model is presented for the saturation voltage and current of submic...
[[abstract]]This article presents an analytical short-channel effect model for nanoscale MOSFETs. Wi...
Thesis (M.S.)--Massachusetts Institute of Technology, Dept. of Electrical Engineering and Computer S...
Rapid advancement of the Metal-Oxide-Semiconductor (MOS) transistor in the last two decades has seen...
[[abstract]]In this paper, we present an analytical short-channel threshold voltage model without an...
It is shown both experimentally and via MINIMOS simulation that the subthreshold swing S = ∂VG ∂log1...
In this paper, the influence of the source/drain (S/D) architecture on the short channel effect (SCE...