Analytical current equations for abrupt and linearly-graded heterojunctions with or without a setback layer have been derived. The equations are general and applicable to both abrupt and linearly-graded heterojunction bipolar transistors. Collector and base currents and small-signal parameters such as transconductance and cutoff frequency of the abrupt and linearly-graded heterojunction bipolar transistors with or without a setback layer are evaluated. Comparisons between the isothermal model, the numerical model, and the present model including self-heating effect are demonstrated
Integral Gummel charge-control relation for both linearly graded-A nd non-graded-base and for single...
An integral Gummel charge-control relation for both linearly graded and non-graded base and for sing...
This paper presents a comprehensive and analyti-cal physics-based and SPICE-like model for hetero-ju...
Analytical equations of electric field, electrostatic potential, and junction capacitance for abrupt...
Analytical equations of electric field, electrostatic potential, and junction capacitance for abrupt...
This paper presents a two-dimensional numerical analysis to investigate the effects of the graded la...
An intrinsic setback layer (or spacer) is frequently used in abrupt heterojunctions to improve the e...
The combined effects of graded and setback layers (W-G and W-1) on the AlGaAs/GaAs heterojunction bi...
The effects of grading on the performance of heterojunction bipolar transistors (HBTs) are studied b...
An empirical model of a heterojunction bipolar transistor is presented. The model expands the Gummel...
Device modeling of the heterojunction bipolar transistor (HBT) has been examined. The Gummel-Poon mo...
An integral Gummel charge‐control relation for both linearly graded and non‐graded base and for sing...
An empirical model of a heterojunction bipolar transistor is presented. The model expands the Gummel...
Description of an eight mode heterojunction bipolar transistor model suitable for circuit simulation...
The combined effects of graded and setback layers (WG and WI) on the AlGaAs GaAs heterojunction bipo...
Integral Gummel charge-control relation for both linearly graded-A nd non-graded-base and for single...
An integral Gummel charge-control relation for both linearly graded and non-graded base and for sing...
This paper presents a comprehensive and analyti-cal physics-based and SPICE-like model for hetero-ju...
Analytical equations of electric field, electrostatic potential, and junction capacitance for abrupt...
Analytical equations of electric field, electrostatic potential, and junction capacitance for abrupt...
This paper presents a two-dimensional numerical analysis to investigate the effects of the graded la...
An intrinsic setback layer (or spacer) is frequently used in abrupt heterojunctions to improve the e...
The combined effects of graded and setback layers (W-G and W-1) on the AlGaAs/GaAs heterojunction bi...
The effects of grading on the performance of heterojunction bipolar transistors (HBTs) are studied b...
An empirical model of a heterojunction bipolar transistor is presented. The model expands the Gummel...
Device modeling of the heterojunction bipolar transistor (HBT) has been examined. The Gummel-Poon mo...
An integral Gummel charge‐control relation for both linearly graded and non‐graded base and for sing...
An empirical model of a heterojunction bipolar transistor is presented. The model expands the Gummel...
Description of an eight mode heterojunction bipolar transistor model suitable for circuit simulation...
The combined effects of graded and setback layers (WG and WI) on the AlGaAs GaAs heterojunction bipo...
Integral Gummel charge-control relation for both linearly graded-A nd non-graded-base and for single...
An integral Gummel charge-control relation for both linearly graded and non-graded base and for sing...
This paper presents a comprehensive and analyti-cal physics-based and SPICE-like model for hetero-ju...