A model for reverse short-channel effects of the threshold voltage is presented by adding two separate n-regions around the source and drain regions of a p-channel MOSFET. Two-dimensional simulations with MEDICI of this modified p-channel MOSFET verifies this model. Experimental evidence of the reverse short-channel effects is also found. The errors inherent to the method for extracting the threshold voltage are shown not to be responsible for the reverse short-channel effects
Includes bibliographical references (pages 48-55)The phenomena of DIBL (Drain Induced Barrier Loweri...
[[abstract]]In this paper, we present an analytical short-channel threshold voltage model without an...
An analytical model is developed which accounts the quantum mechanical corrections to the threshold ...
A model for reverse short-channel effects of the threshold voltage is presented by adding two separa...
A model for the reverse short-channel effects, based on a nonuniform lateral distribution of channel...
As MOSFET dimensions continue to shrink, the promise of further optimizing device performance and th...
The threshold voltage of an MOS field-effect transistor is modulated by the source-to-substrate reve...
[[abstract]]This article presents an analytical short-channel effect model for nanoscale MOSFETs. Wi...
The Jain and Balk analytic model for two-dimensional effects in short channel MOSFETS is investigate...
In this dissertation, an above-threshold I-V model framework is constructed for short-channel double...
International audienceIn this paper, the boundary conditions at the edges of the junctions are discu...
Abstract-A new simplified two-dimensional model for the threshold voltage of MOSFET’s is derived in ...
The accuracy of the existing metal-oxide-semiconductor-field-effect-transistor (MOSFET) models used ...
This paper investigates the effect of threshold voltage on drain current for different channel lengt...
Abstract:- An analytical study of drain induced barrier-lowering coefficient in short channel MOSFET...
Includes bibliographical references (pages 48-55)The phenomena of DIBL (Drain Induced Barrier Loweri...
[[abstract]]In this paper, we present an analytical short-channel threshold voltage model without an...
An analytical model is developed which accounts the quantum mechanical corrections to the threshold ...
A model for reverse short-channel effects of the threshold voltage is presented by adding two separa...
A model for the reverse short-channel effects, based on a nonuniform lateral distribution of channel...
As MOSFET dimensions continue to shrink, the promise of further optimizing device performance and th...
The threshold voltage of an MOS field-effect transistor is modulated by the source-to-substrate reve...
[[abstract]]This article presents an analytical short-channel effect model for nanoscale MOSFETs. Wi...
The Jain and Balk analytic model for two-dimensional effects in short channel MOSFETS is investigate...
In this dissertation, an above-threshold I-V model framework is constructed for short-channel double...
International audienceIn this paper, the boundary conditions at the edges of the junctions are discu...
Abstract-A new simplified two-dimensional model for the threshold voltage of MOSFET’s is derived in ...
The accuracy of the existing metal-oxide-semiconductor-field-effect-transistor (MOSFET) models used ...
This paper investigates the effect of threshold voltage on drain current for different channel lengt...
Abstract:- An analytical study of drain induced barrier-lowering coefficient in short channel MOSFET...
Includes bibliographical references (pages 48-55)The phenomena of DIBL (Drain Induced Barrier Loweri...
[[abstract]]In this paper, we present an analytical short-channel threshold voltage model without an...
An analytical model is developed which accounts the quantum mechanical corrections to the threshold ...