A generalized optimal latching pulse for dynamic sense-amplifier design has been derived. The model equations account for threshold voltage imbalance, bit-line capacitance imbalance, current gain imbalance, gate capacitance and intra-bit-line capacitive coupling effect, channel-length modulation, source-body effect, and temperature sensitivity in a unified manner. Computer simulations of the analytical equations, including those effects, are presented. A design implementation for fast sense-amplifier operation is also presented to demonstrate the utility of the model equations for practical application. © 1990 IEE
An offset compensation technique for a latch type sense amplifier is proposed in this paper. The pro...
Using a current-sensing scheme and novel circuit techniques, the amplifier achieves sensing speeds e...
Abstract — This paper demonstrates Class-A+ amplifier as an alternative to Class-A amplifier for dis...
A generalized optimal latching pulse for dynamic sense-amplifier design has been derived. The model ...
In this paper, to improve a operational speed at low power for memory, we propose a new high-speed d...
[[abstract]]Transistor sizing of a latched sense amplifier is shown to be able to trade sensitivity ...
This research paper presents an improved double tailed latch type voltage sense amplifier by using a...
A latch-type voltage sense amplifier in 90nm CMOS is designed with a separated input and cross-coupl...
A latch-type voltage sense amplifier in 90nm CMOS is designed with a separated input and cross-coupl...
Sense amplifiers are important circuit components of a dynamic random access memory (DRAM), which fo...
Abstract— A latch-type voltage sense amplifier in 90nm CMOS is designed with a separated input and c...
are major concerns because digital circuits are more susceptible to external noise sources. Soft Err...
Sense amplifiers are important circuit components of a dynamic random access memory (DRAM), which fo...
Abstract-This paper derives a new formula for the sensitivity of a vertically matched CMOS sense amp...
Variation in transistor characteristics and particularly threshold voltage (Vt) has emerged as a maj...
An offset compensation technique for a latch type sense amplifier is proposed in this paper. The pro...
Using a current-sensing scheme and novel circuit techniques, the amplifier achieves sensing speeds e...
Abstract — This paper demonstrates Class-A+ amplifier as an alternative to Class-A amplifier for dis...
A generalized optimal latching pulse for dynamic sense-amplifier design has been derived. The model ...
In this paper, to improve a operational speed at low power for memory, we propose a new high-speed d...
[[abstract]]Transistor sizing of a latched sense amplifier is shown to be able to trade sensitivity ...
This research paper presents an improved double tailed latch type voltage sense amplifier by using a...
A latch-type voltage sense amplifier in 90nm CMOS is designed with a separated input and cross-coupl...
A latch-type voltage sense amplifier in 90nm CMOS is designed with a separated input and cross-coupl...
Sense amplifiers are important circuit components of a dynamic random access memory (DRAM), which fo...
Abstract— A latch-type voltage sense amplifier in 90nm CMOS is designed with a separated input and c...
are major concerns because digital circuits are more susceptible to external noise sources. Soft Err...
Sense amplifiers are important circuit components of a dynamic random access memory (DRAM), which fo...
Abstract-This paper derives a new formula for the sensitivity of a vertically matched CMOS sense amp...
Variation in transistor characteristics and particularly threshold voltage (Vt) has emerged as a maj...
An offset compensation technique for a latch type sense amplifier is proposed in this paper. The pro...
Using a current-sensing scheme and novel circuit techniques, the amplifier achieves sensing speeds e...
Abstract — This paper demonstrates Class-A+ amplifier as an alternative to Class-A amplifier for dis...