Add to ORKGA simple technique, based on integrating the current-voltage characteristics, is proposed to determine series resistance and other device parameters of a two-terminal device. The case of the diode is used to illustrate the usefulness of the technique
The two-port description of a four-terminal device like a MOSFFT is incomplete. For complete analysi...
A nongraphical approach is proposed for measuring and evaluating the ideality n factor and the serie...
ABSTRACT: This paper presents an improved method to extract physically meaningful parameters from ou...
A simple technique, based on integrating the current-voltage characteristics, is proposed to determi...
A new method is presented that permits the extraction of a semiconductor device\u27s intrinsic model...
In this brief, extraction methods are proposed for determining the essential parameters of double ga...
A new method for parameters identification of devices of the electric traction systems is offered. T...
In this paper, a genetic-based algorithm is proposed and implemented to extract diode circuit model ...
Parameters that characterize semiconductor devices are often determined with difficulty, and their v...
Purpose. The scientific work provides for the development and justification of a new method for the ...
A new procedure is presented to separate and extract source-and-drain series resistance and mobility...
A procedure is proposed to calculate both pre-exponential reverse currents of the double-exponential...
A new procedure is presented to separate and extract source-and-drain series resistance and mobility...
The direct extraction of the key static parameters of a general diode by the new method named Linear...
We present a device for direct conversion of generalized parameters of passive multicomponent two-te...
The two-port description of a four-terminal device like a MOSFFT is incomplete. For complete analysi...
A nongraphical approach is proposed for measuring and evaluating the ideality n factor and the serie...
ABSTRACT: This paper presents an improved method to extract physically meaningful parameters from ou...
A simple technique, based on integrating the current-voltage characteristics, is proposed to determi...
A new method is presented that permits the extraction of a semiconductor device\u27s intrinsic model...
In this brief, extraction methods are proposed for determining the essential parameters of double ga...
A new method for parameters identification of devices of the electric traction systems is offered. T...
In this paper, a genetic-based algorithm is proposed and implemented to extract diode circuit model ...
Parameters that characterize semiconductor devices are often determined with difficulty, and their v...
Purpose. The scientific work provides for the development and justification of a new method for the ...
A new procedure is presented to separate and extract source-and-drain series resistance and mobility...
A procedure is proposed to calculate both pre-exponential reverse currents of the double-exponential...
A new procedure is presented to separate and extract source-and-drain series resistance and mobility...
The direct extraction of the key static parameters of a general diode by the new method named Linear...
We present a device for direct conversion of generalized parameters of passive multicomponent two-te...
The two-port description of a four-terminal device like a MOSFFT is incomplete. For complete analysi...
A nongraphical approach is proposed for measuring and evaluating the ideality n factor and the serie...
ABSTRACT: This paper presents an improved method to extract physically meaningful parameters from ou...