We have studied the effects of accumulating cyclic electrical pulses of increasing amplitude on the non-volatile resistance state of interfaces made by sputtering a metal (Au, Pt) on top of the surface of a cuprate superconductor YBa2Cu3O7-δ. We have analyzed the influence of the number of applied pulses N on the relative amplitude of the remnant resistance change between the high (RH ) and the low (RL ) state [(α=(RH−RL)/RL] at different temperatures (T). We show that the critical voltage (Vc ) needed to produce a resistive switching (RS, i.e., α>0 ) decreases with increasing N or T. We also find a power law relation between the voltage of the pulses and the number of pulses Nα0 required to produce a RS of α=α0 . This relation remains very...
Progress of silicon-based technology is nearing its physical limit, as the minimum feature size of c...
Understanding resistance changes under a constant or set of bipolar-switching voltage(s) is importan...
Transition metal oxides (TMO) are a class of materials characterized by a dense phase diagram which ...
Current-voltage (IV) characteristics and the temperature dependence of the contact resistance [R(T)]...
We show the existence of a reversible, complementary and polarity dependant electric pulse-induced r...
Current-voltage characteristics of Au/YBa2Cu3Ointerfaces (Au/YBCO), built on optimally-doped YBCO th...
The retention time of the resistive state is a key parameter that characterizes the possible utiliza...
We report on the reversible, non-volatile and polarity-dependent resistive switching between superco...
The retention time of the resistive state is a key parameter that characterizes the possible utiliza...
Resistive switching (RS) phenomena are reversible changes in the metastable resistance state induced...
In order to determine the key parameters that control the resistive switching mechanism in metal-com...
Resistive switching (RS) is one of the foremost candidates for building novel types of non-volatile ...
This paper addresses the resistive switching behavior in yttrium oxide based resistive random access...
The rapid progress of electronics over the past decades has altered many aspects of our lives fundam...
Memory devices based on resistive switching (RS) have not been fully realised due to lack of underst...
Progress of silicon-based technology is nearing its physical limit, as the minimum feature size of c...
Understanding resistance changes under a constant or set of bipolar-switching voltage(s) is importan...
Transition metal oxides (TMO) are a class of materials characterized by a dense phase diagram which ...
Current-voltage (IV) characteristics and the temperature dependence of the contact resistance [R(T)]...
We show the existence of a reversible, complementary and polarity dependant electric pulse-induced r...
Current-voltage characteristics of Au/YBa2Cu3Ointerfaces (Au/YBCO), built on optimally-doped YBCO th...
The retention time of the resistive state is a key parameter that characterizes the possible utiliza...
We report on the reversible, non-volatile and polarity-dependent resistive switching between superco...
The retention time of the resistive state is a key parameter that characterizes the possible utiliza...
Resistive switching (RS) phenomena are reversible changes in the metastable resistance state induced...
In order to determine the key parameters that control the resistive switching mechanism in metal-com...
Resistive switching (RS) is one of the foremost candidates for building novel types of non-volatile ...
This paper addresses the resistive switching behavior in yttrium oxide based resistive random access...
The rapid progress of electronics over the past decades has altered many aspects of our lives fundam...
Memory devices based on resistive switching (RS) have not been fully realised due to lack of underst...
Progress of silicon-based technology is nearing its physical limit, as the minimum feature size of c...
Understanding resistance changes under a constant or set of bipolar-switching voltage(s) is importan...
Transition metal oxides (TMO) are a class of materials characterized by a dense phase diagram which ...