This letter presents the design and experimental characterization of a GaN-Si monolithic Doherty power amplifier (PA) for the Ka-band satellite downlink. The fabricated amplifier favorably compares with the current state of the art, achieving from 16.3 to 20.3 GHz (4 GHz, 22% relative bandwidth), a record band to date, 36.6-37.7-dBm output power, 23%-31% power-added efficiency, 18-22-dB gain at saturation, and around 20% power-added efficiency at 6-dB output back-off. At 18.8 GHz, the amplifier shows a noise-to-power ratio higher than 17 dB at all power levels, making it suitable for satellite applications where additional linearization is usually unfeasible
This paper presents the design and preliminary experimental characterization of a Monolithic Microwa...
The design, implementation and characterization of a Doherty Power Amplifier (DPA) for 3.5 GHz WiMAX...
The design and experimental characterization of a Monolithic Microwave Integrated Circuits (MMICs) P...
This letter presents the design and experimental characterization of a GaN–Si monolithic Doherty pow...
This paper describes the design, realization and tests of different Doherty power amplifiers (DPAs) ...
This letter presents an integrated Doherty power amplifier (PA) in 0.25- μm GaN on SiC process. Desi...
This paper presents a comparison of two sample GaN technologies, one on Silicon and the other on Sil...
This work presents the design and preliminary results of two integrated Doherty power amplifiers fab...
This paper presents the design and the experimental results of a Monolithic Microwave Integrated Cir...
This paper discusses the design steps and experimental characterization of a monolithic microwave in...
This paper presents the design and experimental characterization of a Doherty power amplifier cell t...
This paper presents a Doherty power amplifier working from 3.1 GHz to 3.6 GHz. It adopts 10 W packag...
This paper presents the design and preliminary experimental characterization of a Monolithic Microwa...
The design, implementation and characterization of a Doherty Power Amplifier (DPA) for 3.5 GHz WiMAX...
The design and experimental characterization of a Monolithic Microwave Integrated Circuits (MMICs) P...
This letter presents the design and experimental characterization of a GaN–Si monolithic Doherty pow...
This paper describes the design, realization and tests of different Doherty power amplifiers (DPAs) ...
This letter presents an integrated Doherty power amplifier (PA) in 0.25- μm GaN on SiC process. Desi...
This paper presents a comparison of two sample GaN technologies, one on Silicon and the other on Sil...
This work presents the design and preliminary results of two integrated Doherty power amplifiers fab...
This paper presents the design and the experimental results of a Monolithic Microwave Integrated Cir...
This paper discusses the design steps and experimental characterization of a monolithic microwave in...
This paper presents the design and experimental characterization of a Doherty power amplifier cell t...
This paper presents a Doherty power amplifier working from 3.1 GHz to 3.6 GHz. It adopts 10 W packag...
This paper presents the design and preliminary experimental characterization of a Monolithic Microwa...
The design, implementation and characterization of a Doherty Power Amplifier (DPA) for 3.5 GHz WiMAX...
The design and experimental characterization of a Monolithic Microwave Integrated Circuits (MMICs) P...